InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Xing, Weichuan; Liu, Zhihong; Qiu, Haifeng; Ranjan, Kumud; Gao, Yu; Ng, Geok Ing; Palacios, Tomás

doi:10.1109/led.2017.2773054

Cited by 75 publications

(51 citation statements)

References 23 publications

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“…Such a high electric field gives rise to a sufficiently narrow triangular potential well and causes a profound quantization effect in the motion of the electron perpendicular to the interface. Although a significant process in InAlN/AlN/GaN has been reported [16][17][18][19], the detailed study of the electron quantization effect on these heterostructures is still less well known. Accurate models which are at the same time computationally efficient for optimization of epilayer structure engineering are also highly desirable.…”

Section: Introductionmentioning

confidence: 99%

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

et al. 2018

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A comprehensive model for 2DEG characteristics of InxAl1−xN/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into account. Investigations on the 2DEG density and electron distribution across the heterostructure have been carried out using solutions of coupled 1-D Schrödinger-Poisson equations solved by an improved iterative scheme. The proposed model extends a previous approach allowing for estimating the quantum mechanical effect for a generic InAlN/GaN-based HEMT within the range of the Hartree approximation. A critical AlN thickness (~2.28 nm) is predicted when considering the 2DEG density in dependence on a lattice matched In0.17Al0.83N thickness. The obtained results present in this work provide a guideline for the experimental observation of the subband structure of InAlN/GaN heterostructure and may be used as a design tool for the optimization of that epilayer structure.

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Section: Introductionmentioning

confidence: 99%

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

et al. 2018

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“…Several solutions to supplying the necessary holes have been suggested including injectors near the drain [24], [25] or by controlling the leakage properties of the reverse biased diode under the 2DEG [26], [27]. The latter approach has allowed the current-collapse to be reduced to a few percent at temperatures up to 150°C [28], and clearly this approach is also successful in RF GaN-on-Si devices which do not show significant bulk-induced current collapse [1], [2], [29], [30]. Alternatively, HR-Si offers the possibility to reduce the vertical field by ensuring that the Si is in deep depletion.…”

Section: Suppression Of Back-gating Effectsmentioning

confidence: 99%

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

Chandrasekar

Uren

Eblabla

et al. 2018

IEEE Electron Device Lett.

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We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for static operation and can cause significant back-gateinduced current collapse. Substrate ramp characterization of the buffer shows good agreement with device simulations and indicates that the current collapse is caused by chargeredistribution within the GaN layer. Potential solutions, which alter charge storage and leakage in the epitaxy to counter this effect, are then presented.

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“…Polarization induced 2D electron gas (2DEG), wide bandgap, and high mobility of III-nitride heterostructures makes the devices for high-power density microwave applications. The operating frequency of the GaN-based HEMTs is significantly improved by shrink the device size into deep sub-micron for low parasitic and second order effects [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. However, the short distance between the gate to drain degrade the linearity of the device.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the exploitation of advanced device structure is required to break through the limitation of conventional GaN channel-based devices. The planar nano strip channel MOSHEMT had shown the stable transconductance [29]. However, the peak transconductance (GM) and cut-off frequency of the device are lower than conventional HEMT.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

Revathy

Boopathi

Nirmal

2021

Preprint

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We present the stable transconductance operation of InGaN/GaN composite channel based HEMTs. LG = 55 nm AlGaN/InGaN/GaN (Device A) and InAlN/InGaN/GaN (Device B) HEMTs were proposed and investigated its operational characteristics using numerical simulation. Existence of deeper potential well, the proposed HEMTs possesses high 2DEG (two-dimensional electron gas) density, enhanced electron confinement, and improved electron mobility. As a result, the device shows enhanced current density, and high linearity operation. Furthermore, Al0.04Ga0.96N superlative back-barrier significantly reduces the buffer leakage current resulting in improved breakdown voltage (VBR). The proposed device A (device B) exhibited 2.81 (5) A/mm of output current density, 0.669 (0.7273) S/mm, 4 (7) V of GVS (gate voltage swing), 55.3 (43.5) V of breakdown voltage, and 252/263 (275/289) GHz of FT/FMAX. This excellent device performances illustrates the potential of InGaN/GaN channel HEMTs for future wide-band telecommunication, radio astronomy, radar and space applications.

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InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Cited by 75 publications

References 23 publications

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications

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