In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

“…Trapping/de-trapping are described by the Shockley-read-hall (SRH) statistic modulated by the tunnel transparency between silicon and traps. The physics is similar as for charge pumping modeling [11].…”

Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs

“…6). Low frequency CP measurements [9] have shown that fast and slow traps can be distinguished in depth and that the stress-induced rate is larger in the bulk of the oxide than at the interface. E 0 c centers are known to be related to the positive charging of neutral oxygen vacancy as a precursor site (ÅSi O 3 ) [5].…”

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

“…Most of these latter approaches rely on the extension of the Shockley-Read-Hall (SRH) recombination theory [19] considering elastic tunneling through the oxide barrier. Multifrequency CV [14], [15], [18], deep-level transient spectroscopy [20], [21], trap-assisted tunneling (TAT) [3], [22], and multifrequency charge pumping [23]- [25] experiences have been analyzed to extract the spatial and energetic distribution of defects. However, the models adopted in the aforementioned extractions can lead to major approximations in the estimation of the total trap density and incorrect temperature dependence [26].…”