Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

“…These latter small values suggest that a significant portion of the trapped holes may straightly discharge from the tunneling distance of the bulk with a small temperature dependence of the emission time. This influence of the fast hole discharge from oxide traps to the bulk has also been found at room temperature from low to high oxide fields in our tested PMOS devices with nm [18]. It has been further shown that a significant contribution of border traps is involved during the detrapping mechanism using constant (low) field charging-discharging experiments.…”

“…This has been attributed to hole detrapping observed at lower applied gate voltages [18] and to the waiting time between the stress and the -characterization [19]. As a consequence, the apparent shift is decreased when the recovery influence is increased.…”

“…Recently, attention has been brought to the particular NBTI mechanisms [6], [25] due to hole trapping into the bulk oxide or by charging slow traps in very thin gate oxide [18] according to the hydrogen release model. Comparing Figs.…”

Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide

“…The positive charge trappings for ultra-thin nitrided gate oxide are also known as slow traps. 11,12) Our results also appear to support a recently observed study that HCS PMOS transistors may generate more positivelycharged slow states than LCS PMOS transistors, which can result in a worse negative-bias-thermal-instability (NBTI) degradation after long term stressing. 13)…”