In
                  0.6
                Ga
                  0.4
              As/GaAs
           quantum-dot infrared photodetector with operating temperature up to 260 K

Jiang, Lin; Li, Sheng S.; Yeh, Nien Tze; Chyi, Jen Inn; Ross, C. E.; Jones, K. S.

doi:10.1063/1.1540240

Cited by 133 publications

(70 citation statements)

References 17 publications

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“…Although optical excitation of electrons from the IB to the CB is still possible, it occurs with a low probability, since most of them are thermally excited to the CB. That is the reason why quantum-dot infrared photodetectors (QDIPs) need to work at LT [55], [56], 260 K being the highest temperature at which infrared directivity has been reported in an In(Ga)As/GaAs QDIP without high bandgap blocking barriers [57]. It is therefore remarkable that the InAs/GaNAs-based IBSC prototype reported in [52] exhibits TPPC at RT.…”

Section: ) Subbandgap Spectral Response or Quantum Efficiencymentioning

confidence: 99%

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Ramiro

Martı́

Antolín

et al. 2014

IEEE J. Photovoltaics

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Abstract-The intermediate band solar cell (IBSC) has drawn the attention of the scientific community as a means to achieve high-efficiency solar cells. Complete IBSC devices have been manufactured using quantum dots, highly mismatched alloys, or bulk materials with deep-level impurities. Characterization of these devices has led, among other experimental results, to the demonstration of the two operating principles of an IBSC: the production of the photocurrent from the absorption of two below bandgap energy photons and the preservation of the output voltage of the solar cell. This study offers a thorough compilation of the most relevant reported results for the variety of technologies investigated and provides the reader with an updated record of IBSC experimental achievements. A table condensing the reported experimental results is presented, which provides information at a glance about achievements, as well as pending results, for every studied technology.

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Section: ) Subbandgap Spectral Response or Quantum Efficiencymentioning

confidence: 99%

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Ramiro

Martı́

Antolín

et al. 2014

IEEE J. Photovoltaics

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“…It can offer low-cost MWIR and LWIR photodetectors and focal plane arrays (FPAs) with simplified fabrication processes and high yield. Detailed QDIP performance, such as photoconductive gains, noise, photoresponsivity and photodetectivity can be found in literature [20][21][22][23][24][25][26][27].…”

Section: Nanoplasmonics -Fundamentals and Applicationsmentioning

confidence: 99%

Surface Plasmonics and Its Applications in Infrared Sensing

Gu¹,

Lu²,

Kemsri³

et al. 2017

Nanoplasmonics - Fundamentals and Applications

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Surface plasmonic waves have been extensively researched due to their strong surface confinement. The strong surface confinement allows high absorption in an infrared (IR) detector with a thin active absorption region. The excitation of surface plasmonic resonance (SPR) depends on the metallic structures and the interface materials. This enables engineering of plasmonic-enhanced IR detector properties (e.g. detection wavelength, polarization and angular dependence) by properly designing the plasmonic structures. This chapter first gives a brief review of the surface plasmonic waves, followed by the description of SPR excitation in a metallic two-dimensional (2D) sub-wavelength hole array (2DSHA) structure. The applications of the 2DSHA SPR in IR detector enhancement are then presented with a discussion of the polarization and angular dependence.

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“…On the other hand, in the last few years, IIInitrides devices based on ISB transitions in QDs are potentially interesting especially for quantum-dot infrared photodetectors (QDIPs). The advantages of QDIPs, can mainly categorize in three parts [54]: (a) the 3D quantum confinement of the carriers, which results in the δ-function-like density of states, and high sensitivity to the normal incident radiation without the use of a grating or corrugations as is often done in QWIPs [55][56][57], (b) reduced electron-phonon scattering, which elongates the carrier lifetime, and high current gain [58][59][60], (c) high-temperature operations [61,62].…”

Section: Qd Infrared Photodetectorsmentioning

confidence: 99%

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Weng

Ling

et al. 2011

Nano-Micro Lett.

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During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

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In 0.6 Ga 0.4 As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Cited by 133 publications

References 17 publications

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Surface Plasmonics and Its Applications in Infrared Sensing

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

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