A high-sensitivity In 0.6 Ga 0.4 As/GaAs quantum-dot infrared photodetector ͑QDIP͒ with detection wave band in 6.7-11.5 m and operating temperature up to 260 K under normal incident illumination has been demonstrated. The peak detection wavelength shifts from 7.6 to 8.4 m when the temperature rises from 40 to 260 K. The background limited performance ͑BLIP͒ detectivity (D BLIP * ) measured at V b ϭϪ2.0 V, Tϭ77 K, and p ϭ7.6 m was found to be 1.1 ϫ10 10 cm Hz 1/2 /W, with a corresponding responsivity of 0.22 A/W. The high operating temperature is attributed to the very low dark current and long carrier lifetime in the quantum dots of this device. The results show that this QDIP can operate at high temperature without using the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current.
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