III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Weng, Guoen; Ling, Ao; Lv, Xue; Zhang, J. Y.; Zhang, B. P.

doi:10.1007/bf03353673

Cited by 24 publications

(10 citation statements)

References 86 publications

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“…The VBO of the β-Ga 2 O 3 (−201)/wurtzite GaN (002) heterostructure has been measured by XPS to be 1.40 ± 0.08 eV, with a corresponding CBO of 0.10 ± 0.08 eV from the calculation. Accurate determination of the VBO of GaN/Ga 2 O 3 is critical for the design and application of Ga 2 O 3 /GaN-based electronic and optoelectronic devices [18]. …”

Section: Discussionmentioning

confidence: 99%

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

et al. 2012

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A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

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Section: Discussionmentioning

confidence: 99%

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

et al. 2012

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“…The lattice‐mismatch between semiconductor heterostructures provides a natural way for three‐dimensional (3D) nanostructures to self‐assembly . For about two decades, fabrication of high‐quality, self‐assembled QDs has been well studied using the well‐known S‐K growth mode.…”

Section: Vertically Aligned Quantum Dot Pairsmentioning

confidence: 99%

Epitaxially Self‐Assemblied Quantum Dot Pairs

Lee

et al. 2013

Advanced Optical Materials

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The present paper reviews the recent efforts and achievements regarding the fabrication techniques of self-assembled quantum dot pairs. Quantum dot pairs, the simplest but most-investigated quantum dot molecules, have attracted signifi cant attention due to their potential applications in quantum information technologies. Coupled quantum dot pairs have been used to implement quantum qubits, quantum gates, and exciton-spin memory. In the last several decades, the development of epitaxial growth has advanced the design and control of how novel quantum dot pairs form at nanoscale. Both vertically and laterally aligned quantum dot pairs can be grown using the molecular beam epitaxy technique. In this review, we provide assess various growth methods of aligned quantum dot pairs fabricated by molecular beam epitaxy. We highlight the recent development of novel growth techniques and discuss the morphological, electrical, and optical properties of quantum dot pairs. Using advanced epitaxial growth techniques to fabricate well-controlled quantum dot pairs opens the door to developing of advanced quantum information technologies and understanding the unveiled physics and properties of artifi cial quantum molecules. wileyonlinelibrary.com PROGRESS REPORTwww.MaterialsViews.com www.advopticalmat.de

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“…Due to its good optical properties, like luminescence and good water solubility, carbon-based quantum dots (Cdots) have received extensive attention. 2,3 Not only are they easier to synthesize on a large scale and with low cost but also they stand out due to many of their properties, such as their excellent conductivity, high chemical stability, respect for the environment, wideband optical absorption, low toxicity, strong photoluminescence emission, and optical properties. The surface of the Cdots exhibits chemical functional groups connected or modified, such as groups based on oxygen and amino.…”

Section: Introductionmentioning

confidence: 99%

Experimental and DFT Studies of Hybrid Silver/Cdots Nanoparticles

et al. 2020

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In this work, the combination of experimental and theoretical results was employed to confirm an interaction between Cdots and AgNPs in the silver/Cdots hybrid nanoparticles. The experimental data obtained by UV Vis, IR, zeta potential and TGA techniques were correlated and interpreted by calculations obtained by DFT. Particularly, an interaction between the-COOfunctional group of the Cdots with AgNPs was revealed. As consequence of this interaction, a frequency shift and a higher absorption intensity in the IR of the-OH group in the Cdots was theoretically predicted and also observed in the experimental IR spectra. Moreover a bonding and charge distribution analysis was also carried out. These results constitute new physical insight for Ag@Cdots system. Additionally, based in this type of interaction, energy calculations explained the negative charge surrounding the AgNPs, which was detected by zeta potential measurements. This systematic methodology is not only useful for this nanoparticles system, but could also be used to analyze the interaction between the components that constitute other types of hybrid nanoparticles.

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III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Cited by 24 publications

References 86 publications

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Epitaxially Self‐Assemblied Quantum Dot Pairs

Experimental and DFT Studies of Hybrid Silver/Cdots Nanoparticles

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