In this letter, we report a quantum dot photodetector enhanced by Fano-type interference in a metallic two-dimensional (2D) subwavelength hole array (2DSHA). The photocurrent enhancement wavelength shows an offset from the plasmonic resonant peak and corresponds to a dip in the transmission spectrum of the 2DSHA structure. The offset is attributed to the Fano-type interference in the 2DSHA structure. The asymmetric line shapes of the plasmonic resonance are analyzed and agree well with the two-peak Fano-type interference model. Over 100% enhancement in photodetectivity and photoresponsivity is achieved at the wavelength of the Fano dip of the first order plasmonic mode.

In this paper, we report a quantum dot infrared photodetector (QDIP) enhanced by a backside-configured surface plasmonic structure with an over 40 times peak photocurrent enhancement. The QDIP enhancement by the backside-configured plasmonic structure is compared with that by the top-configured plasmonic structure. The backside-configured plasmonic structure shows much higher photocurrent and photodetectivity D * enhancement.We analyze the excitation of the surface plasmonic waves by the backside-configured and top-configured plasmonic structures. The higher enhancement is attributed to the more efficient surface plasmonic excitation by the backside-configured plasmonic structure.

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In this paper, we analyze near-field vector components of a metallic circular disk array (MCDA) plasmonic optical antenna and their contribution to quantum dot infrared photodetector (QDIP) enhancement. The near-field vector components of the MCDA optical antenna and their distribution in the QD active region are simulated. The near-field overlap integral with the QD active region is calculated at different wavelengths and compared with the QDIP enhancement spectrum. The x-component (E(x)) of the near-field vector shows a larger intensity overlap integral and stronger correlation with the QDIP enhancement than E(z) and thus is determined to be the major near-field component to the QDIP enhancement.

In this paper, we measured the transmission of the 2DSHA surface plasmonic structures and its variation with the hole diameters a of the 2DSHA structures. The relationship between the transmission and the hole diameters a is found to be different from the prediction of Bethe's diffraction theorem. We also found that the photocurrent of the quantum dot (QD) infrared photodetectors (QDIPs) with different QD active layer thicknesses show different dependence on the hole diameters a of the 2DSHA structures. The photocurrent of the QDIPs with 10 active QD layers (10-QDIPs) saturates and starts to decrease as the hole diameter a is larger than 1.6 µm, whereas that of the QDIPs with 20 active QD layers (20-QDIPs) increases linearly with the hole diameter. The difference in the hole-diameter dependence of the 10-QDIPs and the 20-QDIPs is attributed to the variation of the near-field spreading in the vertical (surface-normal) direction due to the change in the hole diameters. An over 6 time (6×) photocurrent enhancement is obtained by optimizing the hole diameter of the 2DSHA surface plasmonic structure.

In this paper, we investigate the conductance of single walled carbon nanotube (SWCNT) networks at different humidity levels and various device temperatures. The carrier transport processes are analyzed by performing a temperature-dependent conductance study. It is found that the conductance of the SWCNT networks is dominated by the thermal activation carrier hopping over the barriers between CNTs. The average separation between the SWCNTs is found to vary linearly with the humidity levels. The humidity-dependent conductance of the SWCNT network is modeled and compared with the experimental data. The model agrees well with the experimental data.

In this paper, we report a surface plasmonic enhanced polarimetric longwave infrared (LWIR) photodetector. Polarization-selective detection of LWIR incidence with different polarizations is achieved at different plasmonic resonant modes. Band-pass spectral filtering is also provided at the plasmonic resonant modes by the plasmonic enhancement. The extinction ratio (ER) of the polarimetric detection and its limiting factor is discussed.

In this paper, we report a mid-wave infrared (MWIR) and long-wave infrared (LWIR) dual-band photodetector capable of voltage-controllable detection band selection. The voltage-tunable dual-band photodetector is based on the multiple stacks of sub-monolayer (SML) quantum dots (QDs) and self-assembled QDs. By changing the photodetector bias voltages, one can set the detection band to be MWIR, or LWIR or both with high photodetectivity and low crosstalk between the bands.