Impurity band conduction effects in liquid phase epitaxial Te‐doped GaP grown from tin solution

Neumann, H.; Butter, E.; Kramer, P.; Köhl, Werner; Ernst, H.

doi:10.1002/crat.19780130407

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1979

Publication Types

Select...

Article1

Book1

Relationship

Self Cite1

Independent1

Authors

Journals

Cited by 2 publications

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Simultaneous doping of GaP with Sn and Zn

Neumann

Butter

Kramer

et al. 1979

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

GaP liquid phase epitaxial layers are grown from tin solution with various amounts of Zn added to the melt (x Zn1 = 3 × 10−3 to 2 × 10−1). The Sn and Zn concentrations NSn and NZn in the solid phase are determined by chemical analysis as function of x Zn1 and the relation NSn ≈︁ NZn ≈︁ (x Zn1)1/2 is found. An analysis of the electrical measurements shows that the electrically active acceptor and donor concentrations are NA ≈︁ 0.04NZn and ND ≈︁ 0.007NSn independent of x Zn1 and that NA is nearly equal to the Zn concentration reported for GaP doped with Zn alone. The beginning formation of a mixed crystal of the type (2 GaP)1‐x (ZnSnP2)x is supposed to be responsible for the observed results.

show abstract