Gallium phosphide (GaP), electron concentration and mobility

,

doi:10.1007/10832182_158

Cited by 1 publication

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured electron mobility values are close to that for bulk or epitaxial GaP (20-50 cm 2 V À1 s À1 ) for the doping level >10 19 cm À3 . 15 However, taking into account the amorphous or microcrystalline structure of our PE-ALD GaP layers, the measured mobility is likely to be related to a strong inversion layer in silicon. The electron mobility in Si inversion layers is significantly lower compared to that of bulk Si due to interface scattering.…”

Section: Resultsmentioning

confidence: 97%

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Journal of Renewable and Sustainable Energy

View full text Add to dashboard Cite

Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) layers onto p-type Si wafers for the fabrication of n-GaP/p-Si heterojunction solar cells. PE-ALD was realized at 380 C with continuous H 2 plasma discharge and the alternate use of phosphine and trimethylgallium as sources of P and Ga atoms, respectively. The layers were doped with silicon thanks to silane (SiH 4) diluted in H 2 that was introduced as a separated step. High SiH 4 dilution in H 2 (0.1%) allows us to deposit stoichiometric GaP layers. Hall measurements performed on the GaP:Si/p-Si structures reveal the presence of an n-type layer with a sheet electron density of 6-10 Â 10 13 cm À2 and an electron mobility of 13-25 cm 2 V À1 s À1 at 300 K. This is associated with the formation of a strong inversion layer in the p-Si substrate due to strong band bending at the GaP/Si interface. GaP:Si/p-Si heterostructures exhibit a clear photovoltaic effect, with the performance being currently limited by the poor quality of the p-Si wafers and reflection losses at the GaP surface. This opens interesting perspectives for Si doped GaP deposited by PE-ALD for the fabrication of p-Si based heterojunction solar cells.

show abstract

Section: Resultsmentioning

confidence: 97%