Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh, A. S.; Uvarov, A. V.; Морозов, И. А.; Baranov, Artem; Kudryashov, D. A.; Nikitina, E. V.; Bukatin, A. A.; Zelentsov, K. S.; Mukhin, I. S.; Levtchenko, Alexandra; Gall, Sylvain Le; Kleider, Jean‐Paul

doi:10.1063/1.5000256

Cited by 21 publications

(13 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Indeed, a high lateral conductivity, which is few orders of magnitude higher compared to that of single GaP layer, with a weak temperature dependence (activation energy <0.1 eV) was previously observed for n‐GaP/p‐Si heterostructures with a‐GaP interface (followed by growth of a‐GaP or μc‐GaP layers). It was explained by the formation of an inversion layer in Si near to the GaP/Si interface due to strong band bending . The formation of this layer with a high electron concentration near the interface in Si was confirmed by Hall measurements.…”

Section: Resultsmentioning

confidence: 73%

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The properties of n‐GaP/p‐Si interface as well as their influence on solar cell performance are studied for GaP layers grown by low‐temperature (380 °C) plasma‐enhanced atomic layer deposition (PE‐ALD). The influence of different plasma treatments and RF power values are explored. The increase of RF power leads to a growth transition from amorphous (a‐GaP) to microcrystalline GaP (μc‐GaP) with either amorphous‐GaP/Si or epitaxial‐GaP/Si interface, respectively. However, when continuous hydrogen plasma is used the amorphous‐GaP/Si interface exhibits better photovoltaic performance compared to the epitaxial one. Values of open circuit voltage, Voc = 0.45–0.55 V and internal quantum efficiencies, IQE > 0.9 are obtained for amorphous‐GaP/Si interfaces compared to Voc = 0.25–0.35 V and IQE < 0.45 for epitaxial‐GaP/Si interfaces. According to admittance spectroscopy and TEM studies the near‐surface (30–50 nm) area of the Si substrate is damaged during growth with high RF power of hydrogen plasma. A hole trap at the level of EV + (0.33 ± 0.02) eV is detected by admittance spectroscopy in this damaged Si area. The damage of Si is not observed by TEM when the deposition of the structures with epitaxial‐GaP/Si interface is realized by a modified process without hydrogen plasma indicating that the damage of the near‐surface area of Si is related to hydrogen plasma interaction.

show abstract

Section: Resultsmentioning

confidence: 73%

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The band diagram for an anisotype n‐GaP/p‐Si heterojunction simulated using AFORS‐HET software is shown in Figure a. It was reported previously that strong band bending in p‐Si leads to the formation of high electron concentration near the interface (called inversion layer), which could be directly detected by Hall measurements . The electron concentration gives us information about the band bending, whereas mobility of electrons in the inversion layer depends strongly on the quality of the GaP/Si interface and defect density ( N t ) of Si in this region near the surface.…”

Section: Electrical Properties Of the Gap/si Interfacementioning

confidence: 98%

“…To study the thermal stability, two annealing series were performed for GaP/Si samples with Si‐doped 50 nm thick GaP layers grown on p‐Si using H‐plasma and no‐plasma modes. For the H‐plasma mode, an additional doping step with heavy diluted SiH 4 :H 2 was introduced after the P‐deposition step according to Gudovskikh et al, whereas in case of no‐plasma mode, stronger diluted SiH 4 was introduced during the PH 3 plasma step to provide SiH 4 decomposition in the plasma. First, rapid thermal annealing (RTA) for 1 min was conducted in a nitrogen environment using a Jipelec JetFirst 100 setup.…”

Section: Growth Details and Structural Propertiesmentioning

confidence: 99%

“…Silicon acts as a donor impurity in GaP. Thus, considering that n‐GaP/p‐Si heterojunctions are of main interest for photovoltaic applications, its diffusion to heavy n‐type doped GaP (above 10 18 cm −3 ) does not lead to significant changes. Moreover, as opposed to the case of GaInP/Ge, where diffusion of both Ga and P atoms in Ge matters, the diffusion coefficient and solubility limits of gallium in Si are significantly lower compared with those of phosphorus, and therefore, Ga diffusion can be neglected.…”

Section: Growth Details and Structural Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Gudovskikh

Uvarov

Морозов

et al. 2019

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The capability of plasma‐enhanced atomic layer deposition (PE‐ALD) for the formation of GaP nucleation layers on Si substrates for further epitaxial growth is explored. The possibility of epitaxial growth of GaP by metalorganic vapor phase epitaxy (MOVPE) on templates prepared by PE‐ALD GaP/Si is demonstrated. The structural and electronic properties of the interfaces between the GaP nucleation layer and the Si substrate as well as their thermal stability are studied. Initially, the GaP/Si structures obtained by PE‐ALD without additional hydrogen plasma exhibit better photoelectric properties compared with that fabricated with high H2 plasma power that induces the formation of defects in the silicon subsurface layer. Annealing at temperatures of 550–600 °C leads to a decrease in the defect concentration created by the hydrogen plasma. Thus, after annealing, the GaP/Si interfaces fabricated by both types of PE‐ALD processes exhibit similar quality. Thermal treatment of the GaP/Si structures at temperatures of 725–750 °C leads to the diffusion of phosphorus from GaP into Si and to the formation of an isotype n‐GaP/n–p‐Si heterojunction with improved photoelectric properties. High‐temperature stability of the GaP/Si interface fabricated by PE‐ALD is essential for its prospective use for GaP/Si templates.

show abstract

“…Формирование инверсионного слоя было подтверждено экспериментально с помощью измерений эффекта Холла для структур n-GaP/p-Si, сформированных с использованием метода АСПХО [23]. Наличие инверсионного слоя свидетельствует о сильном изгибе зон в кремнии и может быть экспериментально оценено из результатов измерения латеральной проводимости.…”

Section: зонная диаграмма гетероструктуры N-gap/p-siunclassified

Исследование влияния термического отжига на фотоэлектрические свойства гетероструктур GaP/Si, полученных методом атомно-слоевого плазмохимического осаждения

Uvarov¹,

Zelentsov²,

Gudovskikh³

2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

The effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the structures containing amorphous GaP, annealing at 550°C leads to a sharp decrease in the quantum efficiency and open-circuit voltage, while in the structures with microcrystalline GaP on an epitaxial sublayer, the photovoltaic characteristics are improved. Annealing at a temperature of 750°C improves the photovoltaic characteristics in all the structures due to the diffusion of phosphorus atoms from GaP to Si and leads to the formation of a layer with n -type conductivity in the substrate. As the annealing temperature is increased to 900°C, the carrier lifetime in the silicon substrate decreases. It is shown that the atomic-layer-deposition technique is promising for the formation of a GaP nucleation layer on the surface of silicon before subsequent epitaxial growth.

show abstract

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Cited by 21 publications

References 20 publications

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Исследование влияния термического отжига на фотоэлектрические свойства гетероструктур GaP/Si, полученных методом атомно-слоевого плазмохимического осаждения

Contact Info

Product

Resources

About