Impulse noise in silicon solar cells

Chobola, Z.

doi:10.1016/s0026-2692(01)00059-3

Cited by 17 publications

(6 citation statements)

References 4 publications

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“…The voltage noise spectral density was measured in forward biased voltage [4,5] being picked up across a load resistance R L = 100 Ω at a band mean frequency of 1 kHz and a bandwidth of 20 Hz [6,7].…”

Section: Methodsmentioning

confidence: 99%

Low-Frequency Noise and Microplasma Analysis for c-Si Solar Cell Characterization

Vaněk

Dolensky

Chobola

et al. 2012

International Journal of Photoenergy

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This paper brings the comparison of solar cell conversion efficiency and results from a noise spectroscopy and microplasma presence to evaluate the solar cell technology. Three sets of monocrystalline silicon solar cells (c-Si) varying in front side phosphorus doped emitters were produced by standard screen-printing technique. From the measurements it follows that the noise spectral density related to defects is of 1/ftype and its magnitude. It has been established that samples showing low noise feature high-conversion efficiency. The best results were reached for a group solar cells with selective emitter structure prepared by double-phosphorus diffusion process.

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Section: Methodsmentioning

confidence: 99%

Low-Frequency Noise and Microplasma Analysis for c-Si Solar Cell Characterization

Vaněk

Dolensky

Chobola

et al. 2012

International Journal of Photoenergy

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“…The study of fluctuation mechanisms is a powerful and non-destructive spectroscopic tool, useful to provide information on the dynamic behaviours and the kinetic processes of the charge carriers in condensed matter 1 . Low-frequency electric noise analysis was proposed, twenty years ago, to determine quality of solar cells and photovoltaic modules 2 3 4 . Subsequently, it was used for the reliability estimation of photovoltaic devices related to microplasma detection 5 , and of iron disilicide heterojunction solar cells 6 .…”

mentioning

confidence: 99%

A noise model for the evaluation of defect states in solar cells

Landi

Barone

Mauro

et al. 2016

Sci Rep

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A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy.

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“…The possibility of the use of noise measurements in analysis, diagnostics and prediction of reliability of electronic devices was studied by many researchers, namely by Van der Ziel and Tong [1], J. Sikula et al [2], Vandamme et al [3], Kleinpenning [4], Konczakowska [5], Jones [6], Jevtic [7], Hruska [8], Chobola [9][10][11][12] . A new specialisationReliability Physics -was created.…”

Section: A Excess Noise Due To Non-ideality Of Samplementioning

confidence: 99%