2016
DOI: 10.1038/srep29685
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A noise model for the evaluation of defect states in solar cells

Abstract: A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form … Show more

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Cited by 37 publications
(39 citation statements)
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References 29 publications
(45 reference statements)
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“…It should be mentioned, that in the electronic industry, noise is indeed often used as early indicator for device failure . For example the thermally induced degradation of polymer solar cells had been monitored with noise spectroscopy and the electronic defect formation in crystalline silicon solar cells under space‐conditions has been recently determined using low‐frequency noise measurement .…”
Section: Resultsmentioning
confidence: 99%
“…It should be mentioned, that in the electronic industry, noise is indeed often used as early indicator for device failure . For example the thermally induced degradation of polymer solar cells had been monitored with noise spectroscopy and the electronic defect formation in crystalline silicon solar cells under space‐conditions has been recently determined using low‐frequency noise measurement .…”
Section: Resultsmentioning
confidence: 99%
“…We emphasize the utility of noise measurements as a quantitative tool to gauge and understand the extent of degradation in these devices . It has been used to study systems like quantum wires, graphene, FETs, along with different solar cells including silicon, organic, and DSSCs . Moreover, electrochemical systems involving ionic interactions are studied as well.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, Equation describes 1/ f noise in the dark for a diffusion‐current dominated p‐n junction diode (an analogous case to OPVs)SnormalI(f)=αnormalHqI04fτeqVkBT1qVkBTwhere S I ( f ) is the current power spectral density, α H is the Hooge parameter, q is the elementary unit of charge, I 0 is the reverse bias saturation current, f is frequency, τ is the charge carrier lifetime, V is the applied bias, k B is Boltzmann's constant, and T is temperature. While the Kleinpenning p‐n junction noise model has been successful in describing classical systems such as silicon solar cells, it has not yet been attempted for OPVs …”
Section: Resultsmentioning
confidence: 99%