Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Abstract

A non-destructive method of reliability prediction for PN junction microelectronic devices is presented . Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

“…The defects are the natural sources of the excess current and the excess noise and they are responsible for the changes of several measurable quantities. Physical processes in electronic devices can give a useful piece of information on the device reliability provided there is a correlation with failure mechanism [6][7][8][9][10][11][12]. It is known that most of failures in the flat region of the "bathtub curve" of the failure rate result from the latent defects created during the manufacture processes or during the operating life of the devices.…”