Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters Using Al-Content Engineered Superlattice Electron Blocking Layer

Yin, Xue; Zhao, Songrui

doi:10.1109/jqe.2023.3234991

Cited by 8 publications

(4 citation statements)

References 52 publications

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“…The IQE refers to the ratio between radiative recombination and total recombination occurred in the epitaxial layer [65]. The obtained IQEs for all EBLs structure is comparable with previous findings where the range of the IQE is within 30% to 60% [9,25,27]. The IQEs for the DUV-LED exhibits almost same efficiency.…”

Section: Resultssupporting

confidence: 87%

“…´cm −3 s −1 , respectively [39]. The chip dimension of the device is 400 m m ´400 m m. The electric field polarization compensation is set to 50% [5,27], the temperature was assumed to be 300 K [27] and the applied voltage of the DUV-LED is 7.5 V.…”

Section: Model Theory and Device Configurationmentioning

confidence: 99%

“…The approach of configuring the compatible EBL design in the epilayers is very useful to enhance the DUV-LED performances especially by decreasing the parasitic carrier reservoir through the implementation of p-doped layers to sandwich the active region [23], irregular sawtooth EBL [24], a triangle-shaped EBL [13] and superlattice EBL [20,21,[25][26][27][28][29]. The configuration and design are analyzed based on reducing the electron overflow and enhancing the hole injection into the active region.…”

Section: Introductionmentioning

confidence: 99%

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Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Hairol Aman,

Ahmad Noorden,

Daud

et al. 2024

Phys. Scr.

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Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers. However, the issue of parasitic carrier reservoir that originated from the uncontrolled piezoelectric field polarization has restricted the performance of DUV-LED by reducing the radiative recombination in the active region. This work reports on the numerical computation analysis of the DUV-LED with different types of EBL designs which are reference EBL, conventional superlattice EBL and step-graded superlattice EBL. The analysis of the DUV-LED focuses on the band diagram, carrier concentration at the EBL interfaces, current density of the carrier in the active region, radiative recombination rates, and luminescence spectrum. Remarkably, it is found that the DUV-LED step-graded superlattice EBL provides the polarization-controlled band diagram and emits 272 nm UVC-wavelength in which it is superior in performance compared to the other structures, specifically in terms of its radiated intensity. The parasitic electron and hole reservoir have been reduced by 30% and 60%, respectively. The luminescence intensity was also enhanced by 11% compared with the reference EBL and the IQE obtained by the DUV-LED with step-graded superlattice EBL is 50.12%.

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Section: Resultssupporting

confidence: 87%

Section: Model Theory and Device Configurationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Hairol Aman,

Ahmad Noorden,

Daud

et al. 2024

Phys. Scr.

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“…As the Al composition in AlGaN increases from 0% to 100%, the activation energy of Mg rises from 170 meV to 470 meV [ 8 ]. This notable increase in activation energy leads to the activation of only a few Mg dopants for hole generation in AlGaN materials with high Al composition at room temperature [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

Zhao,

Liu,

et al. 2024

Micromachines

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In this study, we propose a polarized electron blocking layer (EBL) structure using AlxGa1−xN/AlxGa1−xN to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). Our findings indicate that this polarized EBL structure significantly improves IQE compared to conventional EBLs. Additionally, we introduce an electric-field reservoir (EFR) optimization method to maximize IQE. Specifically, optimizing the polarized EBL structure of AlxGa1−xN/AlxGa1−xN enhances the hole drift rate, resulting in an IQE improvement of 19% and an optical output power increase of 186 mW at a current of 210 mA.

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Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer

Mazumder,

Sapra,

Chahun

et al. 2023

Opt Quant Electron

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The photosensitive and electrical characteristics of almost e ciency-droop-free UV-C LEDs with a Mgdoped LQB and Si-doped shallow periodic electron injection layer in between Mg-doped EBL and Hole injection layer are studied numerically in order to enhance the optical and electrical performance.SiLENSe software is used to look into the QB-QWs region's IQE, energy band pro les, electron and hole concentration, and radiative recombination rates. The ndings show that the proposed UV-C LED has peak IQE 140% higher than the reference one, which is generally related to the improvement of electron and hole function overlapping in QB-QWs region. The proposed modi cation would decrease hole barrier depth by 64% in LQB-EBL, which is what causes the 190% better hole injection from Mg-doped layer.

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Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters Using Al-Content Engineered Superlattice Electron Blocking Layer

Cited by 8 publications

References 52 publications

Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer

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