Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier
Zhuang Zhao,
Yang Liu,
Peixian Li
et al.
Abstract:In this study, we propose a polarized electron blocking layer (EBL) structure using AlxGa1−xN/AlxGa1−xN to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). Our findings indicate that this polarized EBL structure significantly improves IQE compared to conventional EBLs. Additionally, we introduce an electric-field reservoir (EFR) optimization method to maximize IQE. Specifically, optimizing the polarized EBL structure of AlxGa1−xN/AlxGa1−xN enhances the h… Show more
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