Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting
Mohammad Amirul Hairol Aman,
Ahmad Fakhrurrazi Ahmad Noorden,
Suzairi Daud
et al.
Abstract:Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers. However, the issue of parasitic carrier reservoir that originated from the uncontrolled piezoelectric field polarization has restricted the performance of DUV-LED by reducing the radiative recombination in the active region. This work reports on the numerical computation analysis of the DUV-LED with different types o… Show more
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