Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer

Abstract

The photosensitive and electrical characteristics of almost e ciency-droop-free UV-C LEDs with a Mgdoped LQB and Si-doped shallow periodic electron injection layer in between Mg-doped EBL and Hole injection layer are studied numerically in order to enhance the optical and electrical performance.SiLENSe software is used to look into the QB-QWs region's IQE, energy band pro les, electron and hole concentration, and radiative recombination rates. The ndings show that the proposed UV-C LED has peak IQE 140% higher than the reference one, which is generally related to the improvement of electron and hole function overlapping in QB-QWs region. The proposed modi cation would decrease hole barrier depth by 64% in LQB-EBL, which is what causes the 190% better hole injection from Mg-doped layer.