Improvement to the Lateral Mode Stability in High-Power Laser Diodes by Multistripe-Gain Distribution

Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution

“…Hence, too strong modulation causes a side effect on the FF angle. Similar results can be found in the previous works on tailoring the gain distribution by the ion implantation method [16][17][18][19] . The ion implantation method often leads to a strong modulation of the gain distribution and hence the large lateral divergence [16][17][18][19] .…”

“…These methods are effective in suppressing the FF blooming effect, but increase the complexity and hence the fabrication cost, which is sensitive for the industrial manufacturing of high-power BA diode lasers. The other extensively used method is the distributed electrode design to tailor the gain distribution [13][14][15][16][17][18][19] , which is realized by the patterned electrode, including the nonuniform electrode patterns [13][14][15] and multi-stripe [16][17][18][19] patterns. Although the nonuniform electrode pattern realizes the narrow slow axis FF [14,15] , there is no demonstration of the improvement of FF blooming.…”

“…For the multi-stripe gain devices, periodic gain profiles are formed to reduce the filamentation effect. However, the use of selective ion implantation results in the large lateral divergence [16,19] and the double-lobed FF [17,18] due to the deep modulation on the gain distribution. The restricted FF blooming effect [19] was demonstrated but with a widened lateral divergence.…”

A Realization of Stabilizing the Output Light Power from a Laser Diode: A Practical Approach

“…However, the work was related to a high power laser of 2.1W. Similarly, authors in [10] reported the stabilization of optical power in high power laser which achieved lateral mode stability. This property has been used in improving the stability of beam quality.…”

High-power GaSb-based microstripe broad-area lasers

“…14,15) In addition, the carrier diffusion in the BA waveguide will also result in the carrier leakage and accumulation at the ridge edges, deteriorating the FF performance. 16) Several approaches, such as nonuniform electrodes [16][17][18] and multiple microstripes, [19][20][21] were proposed to resolve these issues in GaAs-based BA lasers, but they also show some limitations including a large lateral divergence 19,20) and a sensitive double-lobed FF 19,21) owing to shallow and deep gain distribution modulations.…”