Electronic and optical properties of 1.3 m Ga As Sb N Ga As quantum well lasers J. Appl. Phys. 100, 043113 (2006); 10.1063/1.2266195 Doping in quantum cascade lasers. II. Ga As Al 0.15 Ga 0.85 As terahertz devices J. Appl. Phys. 100, 043102 (2006); 10.1063/1.2234805 Room-temperature operation of 3.26 m GaSb-based type-I lasers with quinternary AlGaInAsSb barriers
The performance of the present-day Scanning Electron Microscopy (SEM) extends far beyond delivering electronic images of the surface topography. One of the most noticeable achievements of the technique was recognition of p- and n-type conductive channels on the semiconductor surface. Here, we report on the possibility of visualization of highly resistive layers produced by ion irradiation. The presented high-resolution imaging of damage-induced insulating layers was made possible through application of low energy of the primary beam (1 keV), optimization of the instrument parameters and effective separation of the so-called SE1 vs. SE2 secondary electrons.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.