2017
DOI: 10.3788/col201715.071404
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Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution

Abstract: Far-field blooming, a serious far-field dependence on driving current, affects the stability of beam quality and applications of broad-area (BA) diode lasers. In this Letter, the lateral ridge waveguide (LRW) is introduced to BA lasers by a simple and cost-effective approach to control the far-field stability and beam divergence. The influences of LRW length on output power, near-and far-field, are investigated and it is found that the optimized LRW length is able to improve both the far-field blooming and out… Show more

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Cited by 8 publications
(3 citation statements)
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“…has the lowest current dependence at 1.35 °/A, achieving a 38% improvement compared to the 2.19 °/A observed in BA lasers. This indicates a significant enhancement in the lateral far-field blooming effect [27]. Furthermore, it is evident that for this device, the variations in the position of the microstructure along the longitudinal direction of the cavity have a minor impact on output power and lateral far-field performance.…”
Section: Resultsmentioning
confidence: 79%
“…has the lowest current dependence at 1.35 °/A, achieving a 38% improvement compared to the 2.19 °/A observed in BA lasers. This indicates a significant enhancement in the lateral far-field blooming effect [27]. Furthermore, it is evident that for this device, the variations in the position of the microstructure along the longitudinal direction of the cavity have a minor impact on output power and lateral far-field performance.…”
Section: Resultsmentioning
confidence: 79%
“…The development of metal-organic chemical vapor deposition (MOCVD) technology has contributed to improving the performance of the optoelectronic devices, such as the edge emitting laser (EEL) [1,2], vertical-cavity surface-emitting laser (VCSEL) [3,4], and photovoltaic cell (PVC) [5,6]. However, the cost of epitaxy is still too high for many applications.…”
Section: Introductionmentioning
confidence: 99%
“…16) Furthermore, uniform gain profile and improved optical field stabilization can be achieved due to the suppression of current spreading by proton implantation or tailoring the current injection path. [17][18][19][20][21][22] Another effective way is introducing mode filters to produce extra loss for highorder modes, such as reducing the stripe width, tapered laser, 23,24) titled cavity, 25) inhomogeneous waveguide, 26) microstructure 27,28) and on-chip transverse Bragg grating. 29) All these lateral structuring techniques have improved the farfield divergence and beam quality of diode lasers due to enhanced mode discrimination.…”
mentioning
confidence: 99%