Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

Abstract

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Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

“…It was found that the TD density can be lowered one order of magnitude than the conventional UVLED by inserting the SiN buffer layer. The density of dislocations is remarkably lower in GaN layers grown after SiN buffer than the density in layers obtained using the conventional process [13][14][15]. Fig.…”

“…However, such a procedure is relatively complex that inevitably results in a low production yield. Recently, it has been reported that one can reduce the defect density in nitride-based epitaxial layers using GaN-SiN as the nucleation layer [8][9][10][11][12][13][14][15]. Many nanometer-sized porous SiN layer probably serves to enhance the lateral growth, which is quite similar to that in ELO to reduce dislocation density.…”

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

“…The broadening of this peak suggests that GaN epilayer is non-uniform within the PL laser spot. Considering that the carrier concentration, as measured by CV, was 1.1E17 cm À3 and 1.3E17 cm À3 for sample #1 and #6 respectively, the difference in intensity between both samples can be the result of a different defect densities [26].…”

Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment

“…The in situ treatment of SiN x is reported to be effective in reducing the dislocation density by promoting selective nucleation and a 3D growth mode in the initial stages of the growth [8][9][10]. In this method the sapphire is exposed to a simultaneous flow of SiH 4 and NH 3 , which results in the formation of a thin amorphous SiN x layer.…”

“…The GaN-NL grown on the SiN x -treated sapphire is reported to consist of a reduced number of a well-defined 3D large-sized islands instead of a flat layer-like GaN-NL with a large number of tiny crystallites, which cover the whole substrate (in case of no pre-treatment) [1,8]. The achievement of selective growth just by in situ treatment makes this method attractive in terms of its simplicity and low costs.…”