Improvement of RTS Noise in HgCdTe MWIR Detectors

Brunner, A.; Rubaldo, L.; Destefanis, V.; Chabuel, Fabien; Kerlain, A.; Bauza, D.; Baier, N.

doi:10.1007/s11664-014-3217-z

Cited by 32 publications

(14 citation statements)

References 7 publications

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“…RTS noise can be particularly detrimental to image quality since the resulting blinking effect cannot be suppressed by 2-point correction. It is thus considered as a major challenge that different technologies will have to face [16][17][18], especially in addressing high operating (HOT) and size, weight and power (SWaP) requirements.…”

Section: Resultsmentioning

confidence: 99%

“…This number increases, but the evolution seems not dictated by changes in cooling cycles (materialized by arrows). Pixels jumping between two different states can be classified according to features such as the jump amplitude and the up and down mean times [17]. The only 2-level pixel with enough jumps to conduct such analysis is pixel n°5409 (see Figure 11).…”

Section: Resultsmentioning

confidence: 99%

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Temporal stability and correctability of a MWIR T2SL focal plane array

Ribet-Mohamed

Nghiem

Caes

et al. 2019

Infrared Physics & Technology

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Stability over time has recently become a figure of merit of major importance to compare the performances of infrared focal plane arrays (FPA) of different technologies. Indeed, this parameter dictates how often the calibration of operational electro-optical systems has to be done, and thus reflects the availability of the system during an operational mission. Recent studies also showed that random telegraph signal (RTS) noise, which leads to flickering pixels, can strongly affect the image quality. Highlights :-Stability over time and RTS noise of a commercial T2SL midwave infrared FPA have been investigated.-RFPN/TN ratio stays lower than unity for more than 7 weeks-number of RTS pixels is as low as 10 for a 5-minutes long measurement

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Temporal stability and correctability of a MWIR T2SL focal plane array

Ribet-Mohamed

Nghiem

Caes

et al. 2019

Infrared Physics & Technology

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“…This suggests an SRH generation mechanism from a depleted area for both materials. Moreover, in [24] and [26], the activation energy is 0.1 eV for a bandgap of 0.2 in HgCdTe. As for silicon and InSb, the underlying mechanism seems to be the e-h pair generation in depleted regions, even if the mean dark current is dominated by the diffusion contribution.…”

Section: Temperature Dependencementioning

confidence: 98%

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Durnez

Goiffon

Virmontois

et al. 2020

IEEE Trans. Electron Devices

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In this work, the parasitic discrete fluctuation of dark current (dc) called random telegraph signal (RTS) is analyzed in image sensors based on two different semiconductor materials: InSb and silicon. The results show that this dc-RTS phenomenon exhibits similar characteristics on both technologies strongly suggesting a common physical origin. This conclusion is extended to InGaAs and HgCdTe (also referred to as MCT)-based image sensors by comparing the presented results to the existing literature.

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Section: Random Telegraph Signal Noise Studymentioning

confidence: 99%