Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Abstract

In this work, the parasitic discrete fluctuation of dark current (dc) called random telegraph signal (RTS) is analyzed in image sensors based on two different semiconductor materials: InSb and silicon. The results show that this dc-RTS phenomenon exhibits similar characteristics on both technologies strongly suggesting a common physical origin. This conclusion is extended to InGaAs and HgCdTe (also referred to as MCT)-based image sensors by comparing the presented results to the existing literature.

Study of damages caused by proton irradiation on MCT n/p focal plane cooled arrays

“…Figure14bcalls also for another comment. Previous studies of radiation induced RTS for Si or InSb reported an exponential amplitude distribution, both before and after irradiation[15] [17]. Here, in Figure14b, distributions appear not perfectly exponential.…”

“…Another well-known radiation induced behavior is the emergence of random telegraph signal (RTS), also called burst or flicker noise. Such an effect has been observed on different material systems [13] such as Silicon transistors or diodes [14], in particular in Si solid-state imagers [15] or even narrower semiconductor materials such as InGaAs [16] and InSb [17]. RTS has also been observed and studied in MCT [18][19] [20].…”

Enhancing DFT-based energy landscape exploration by coupling quantum mechanics and static modes

“…Regarding the exploration from the TIS-1 0 configuration, we conclude that TIS-1 0 is metastable, tending to return to the initial configuration, not consistent with the I 4 migration. This state is however of crucial interest in particular for the understanding of leakage currents observed in microelectronic silicon based-devices 55 whose origin is well identified as coming from the metastability of structural defects, out of the scope of the present study. We therefore do not pursue the exploration of the TIS-1 0 configuration.…”

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

“…Up to ten have been measured with the certainty that they do not originate from separate defects. -Observation c [18]: For simple dark currents that do not oscillate, all activation energies above the mid-gap are observed. However, the activation energies of RTS are mainly at midgap.…”