Improvement of IGBT model characterization with experimental tests

Musikka, Tatu; Popova, L.; Juntunen, Raimo; Lohtander, Mika; Silventoinen, Pertti; Pyrhönen, Olli; Pyrhönen, Juha; Maula, Kari

doi:10.1109/epe.2013.6631841

Cited by 12 publications

(4 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the inclusion of a 10% freewheeling time mitigates the turn-on surge, and the IGBT switching power loss reduces almost by one order of magnitude. These switching transients demonstrate a good agreement with results from ANSYS/Simplorer R , whose IGBT/diode model has been experimentally validated against real devices and shows a decent accuracy from both static and dynamic perspectives [29], [30]. The accumulated energy losses under these 2 scenarios also show a good agreement with the validation tool in Fig.…”

Section: Heterogeneous Cpu/gpu Hpc Results and Validationsupporting

confidence: 73%

Hierarchical Device-Level Modular Multilevel Converter Modeling for Parallel and Heterogeneous Transient Simulation of HVDC Systems

Lin

Zhu

Dinavahi

2020

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

System-level electromagnetic transient (EMT) simulation of large-scale power converters with high-order nonlinear semiconductor switch models remains a challenge albeit it is essential for design preview. In this work, a multi-layer hierarchical modeling methodology is proposed for high-performance computing of the modular multilevel converter involving devicelevel IGBT/diode models. The computational burden induced by converter scale and model complexity is dramatically alleviated following the proposal of topological reconfiguration and network equivalence, which create a substantial number of identical circuit units that facilitate massively parallel processing on the graphics processing unit (GPU), using the kernel-based single-instruction multi-threading computing architecture. As the DC system brings significant inhomogeneity which dilutes parallelism, heterogeneous computing is investigated and the computational tasks are properly assigned to CPU and GPU to fully exploit their respective features. The separation of nonlinear device-level models from the rest of the system enables multirate implementation for further efficiency enhancement since the two parts allow distinct time-steps. A remarkable acceleration of over 50 times is achieved by the hybrid CPU/GPU platform over conventional CPU simulation, and the validity of the proposed modeling and computing method is confirmed by commercial EMT tools ANSYS/Simplorer R and PSCAD/EMTDC R .

show abstract

Section: Heterogeneous Cpu/gpu Hpc Results and Validationsupporting

confidence: 73%

Hierarchical Device-Level Modular Multilevel Converter Modeling for Parallel and Heterogeneous Transient Simulation of HVDC Systems

Lin

Zhu

Dinavahi

2020

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

show abstract

“…The IGBT chip model is characterised by a semi‐automatic characterisation tool of the simulation software [29] and it is used to investigate IGBT behaviour in [30]. Information for characterisation is extracted from the device datasheet [31] (typical parameter values are used in this study).…”

Section: Simulation Modelmentioning

confidence: 99%

Modelling of high‐power IGBT module short‐circuit operation and current distribution by a behavioural model

Musikka

Smirnova

Niemelä

et al. 2016

IET Power Electronics

Self Cite

View full text Add to dashboard Cite

This study presents current distribution modelling methods for a dual pack insulated-gate bipolar transistor (IGBT) module, which is operating under short-circuit conditions. The parasitic components of the commutation circuit current conductors and the internal busbars of the module are modelled by a three-dimensional finite-element method and the IGBT chips by a behavioural semiconductor model. The lumped IGBT chip model is characterised by using datasheet information only and without fine tuning of the model parameters. The mechanical dimensions of the IGBT module and the experimental setup are used to define the parasitic components for the commutation circuit. The model accuracy is investigated by comparing simulated dynamic and steady-state short-circuit parameters with experimental ones. Furthermore, uneven current distribution in the module main current terminals is observed in the simulations, and the behaviour is verified by experimental tests. The phenomenon may cause additional mechanical and electrical stresses in the device for instance because of thermal expansion and current couplings. The results show that the proposed methods are suitable to model the IGBT short-circuit behaviour and current distribution inside the module and can be used for example in the virtual design of power electronic inverter or switched power supply.

show abstract

“…Earlier works on EMI modelling of power converters usually use lumped circuits to model high frequency behavior of the circuits [10]- [12]. This technique is called time-domain modelling and requires detailed information of all the internal and parasitic impedances in the circuits and the physics-based models of the semiconductor devices, which may not be available.…”

Section: Introductionmentioning

confidence: 99%

A New EMI Modeling Method for Mixed-Mode Noise Analysis in Three-Phase Inverter System

Pei

Xiang

et al. 2020

IEEE Access

View full text Add to dashboard Cite

A novel frequency-domain EMC modeling technique is proposed to predict the conducted electromagnetic interference (EMI) in a three-phase inverter system. On the basis of the frequency-domain model, a three-terminal behavior model for analyzing mixed-model (MM) noise is derived. Different from the traditional model, the CM and DM noise sources are independent of each other, thus help to understand the MM phenomenon directly. It is shown that three stray capacitors in the IGBT module determine the amplitude of the MM noise, and the influence of the load current on the traditional CM and DM noise sources can be used for the MM noise observation. The simulation and experimental results are illustrated to verify the prediction technique and the MM noise analysis is confirmed. INDEX TERMS Conducted electromagnetic interference (EMI), EMI modeling, mixed-mode (MM) noise, three-phase inverter.

show abstract

Improvement of IGBT model characterization with experimental tests

Cited by 12 publications

References 14 publications

Hierarchical Device-Level Modular Multilevel Converter Modeling for Parallel and Heterogeneous Transient Simulation of HVDC Systems

Hierarchical Device-Level Modular Multilevel Converter Modeling for Parallel and Heterogeneous Transient Simulation of HVDC Systems

Modelling of high‐power IGBT module short‐circuit operation and current distribution by a behavioural model

A New EMI Modeling Method for Mixed-Mode Noise Analysis in Three-Phase Inverter System

Contact Info

Product

Resources

About