Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment

Abstract

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Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts

“…The structure consists of a 1-m-thick undoped buffer layer, a thin n-type active layer doped with Si to mid-10 cm (high doped layer), a thick n-type active layer doped with Si to mid-10 cm (low doped layer), and an undoped GaAs layer for surface passivation. The top layer of undoped GaAs has the role of protecting the active layer from the surface defects created by oxygen chemisorption [5].…”

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

“…This higher value of BV gd is due to the separation of the high-low doped channel layer from the surface defects created by oxygen chemisorption by growing the top layer of undoped GaAs. If the surface defects are created at channel layer, they act as a trapping site for carrier, and cause the reduction of BV gd [12]. The current gain cutoff frequency f t of the 400 m-wide device (2 200 m), measured at the bias condition for power operation (V gs D 2:1V and V ds D 3:3V), was around 18GHz.…”

“…In order to improve power gain by reducing the output conductance, GaAs/AlGaAs superlattices were introduced into the buffer layer. The top layer of undoped GaAs is used for protecting the active channel layer from surface defects created by oxygen chemisorption [12]. The thickness of the low-doped layer was designed to be twice larger than the depletion layer width after gate formation.…”

2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency

“…In order to improve power gain by reducing the output conductance, GaAdAlGaAs superlattices were introduced into the buffer layer. Top layer of undoped GaAs has a role of protecting the active channel layer from surface defects created by oxygen chemisorption [5]. Manuscript Thickness of the low-doped layer was designed as two times higher than depletion layer width after gate formation.…”

“…This higher value of BVBD could be explained as the top undoped layer separates the high-low doped channel layer from the surface defects created by oxygen chemisorption. If the surface defects are created at channel layer, they act as a trapping site for carrier, which causes reduction of BVBD [5].…”