IEEE Electron Device Lett.
 1994
DOI: 10.1109/55.311122
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2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency

Jong‐Lam Lee
1
,
Haecheon Kim
2
,
Jae‐Kyoung Mun
3
et al.
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Cited by 28 publications
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