We report on demonstrating high performance lateral β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 × 1018 cm−3) β-Ga2O3 epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (Lgd) of 25 μm, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral β-Ga2O3 MOSFET with high VBR of more than 2 kV and the highest VBR attained among all the Ga2O3 MOSFETs. The breakdown voltages with different Lgd from 5–25 μm ranged from 518–2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral β-Ga2O3 MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV.
The transport and trapping of photocharges in liquid crystals placed between photoconductive polymer layers was investigated systematically. The transport of the photocharges is explained in terms of current paths that are formed along the bright sites of an interference pattern. Our study shows clearly that charge trapping occurs predominantly in the photoconductive poly(N-vinylcarbazole) layers and not in the insulating poly(vinyl alcohol) layers, contrary to a previous report.
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.
Asymmetric two‐beam coupling without a space‐charge field or electro‐optical and orientational effects was detected in hemicyanine‐dye‐containing polymer composites. This phenomenon, termed “pseudo‐photorefraction” by the authors, appears to arise from movement of the interference pattern and mass transport within the polymer matrix. Large optical gain effects and amplification up to 30 % qualify the materials for simple yet highly effective photorefractive devices.
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