A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

Lee, Jong‐Lam; Kim, Haecheon; Mun, J.; Kwon, O–Kyun; Lee, Jae Jin; Hwang, In-Kyeong; Park, Hyung-Moo

doi:10.4218/etrij.95.0195.0001

Cited by 13 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For good linearity in the power amplifier design, it is well known that the core transistor has a normally low-and high-doped mixed channel layer and shows uniform transconductance characteristics with the gate voltage up to a biasing point [5]. For uniform transconductance, the high-doped layer should be located deeper than the low-doped one from the Schottky contact electrode [6][7][8][9].…”

Section: Design Of Switching Fetsmentioning

confidence: 99%

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

Mun

Ahn

et al. 2005

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, we propose a channel structure for a promising switch pHEMT with excellent isolation characteristics based on the distribution of electric field intensity beneath the Schottky contact in the transistor. Using the proposed device channel structure, SPST and SPDT switches were designed and fabricated, applicable to 2.4 GHz and 5.8 GHz WLAN systems. We discuss the relationship between dc characteristics and switch parameters in this paper in detail. The developed SPST switch exhibits a low insertion loss of 0.26 dB and a high isolation of 34.3 dB with a control voltage of 0 V/−3 V at 5.8 GHz. The SPDT also shows a good performance of 0.85 dB insertion loss and 31.5 dB isolation under the same conditions. The measured power-handling capability at 2.4 GHz reveals that the SPDT has an output power of 27 dBm at the 1 dB compression point and a third-order intercept point of more than 46 dBm.

show abstract

Section: Design Of Switching Fetsmentioning

confidence: 99%