Improvement in NiSi/Si contact properties with C-implantation

Nakatsuka, Osamu; Okubo, Kazuaki; Sakai, Akira; Ogawa, Masahiro; Yasuda, Yukio; Zaima, Shigeaki

doi:10.1016/j.mee.2005.07.046

Cited by 60 publications

(34 citation statements)

References 13 publications

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“…For Ni silicidation incorporated with carbon, the agglomeration of poly-NiSi is effectively suppressed and the continuous and conformal films with flat interface are obtained ( Fig. 9(b)), as previously reported [11,12]. On the other hand, after 750 8C silicidation annealing, in the Ni/Si system without carbon incorporation, the agglomeration of NiSi grains is observed, as shown in Fig.…”

Section: Resultssupporting

confidence: 85%

Source/drain engineering for MOSFETs with embedded-Si:C technology

Itokawa¹,

Yasutake²,

Kusunoki³

et al. 2008

Applied Surface Science

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Section: Resultssupporting

confidence: 85%

Source/drain engineering for MOSFETs with embedded-Si:C technology

Itokawa¹,

Yasutake²,

Kusunoki³

et al. 2008

Applied Surface Science

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“…C preimplantation to Ge 1−x Sn x also effectively improves the thermal stability of the poly-Ni(Ge 1−x Sn x ) layer on Ge 1−x Sn x [112]. It is known that C incorporation into Ge substrates improves the thermal stability of poly-NiGe films on Ge substrate [113,114], and this technology should also be available in poly-Ni(Ge 1−x Sn x )/Ge 1−x Sn x systems.…”

Section: Formation and Properties Of Metal/ge 1−x Sn X Contactsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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“…Moreover, some values for NiSi can be found in the literature [4]- [7], but no solid database for NiSi-silicon contact resistance exists, particularly for a broad range of doping levels. Most of the research studying ρ c used cross-bridge Kelvin resistor (CBKR) structures, while in modern IC technology, one would tend to use transmission-line model (TLM) structures as they could be easier embedded in the standard self-aligned silicide CMOS process [8].…”

Section: Motivationmentioning

confidence: 99%

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

Stavitski

Dal

Lauwers

et al. 2008

IEEE Electron Device Lett.

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Abstract-We present the data on specific silicide-to-silicon contact resistance (ρ c ) obtained using optimized transmission-line model structures, processed for a broad range of various n-and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi-silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference.

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Improvement in NiSi/Si contact properties with C-implantation

Cited by 60 publications

References 13 publications

Source/drain engineering for MOSFETs with embedded-Si:C technology

Source/drain engineering for MOSFETs with embedded-Si:C technology

Growth and applications of GeSn-related group-IV semiconductor materials

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

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