Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Edwards, Andrew; Mittereder, J.; Binari, S.C.; Katzer, D. Scott; Storm, David F.; Roussos, J.A.

doi:10.1109/led.2005.844694

Cited by 120 publications

(63 citation statements)

References 10 publications

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“…In spite of temporary stabilization of surface properties, an additional surface layer causes stress-induced changes in the barrier layer [11][12][13][14] and changes the conditions for the formation of 2DEG as a result of piezoelectric and spontaneous polarization effects. Therefore, additional methods, such as plasma pretreatment, 15,16 were used before passivation to improve the electrical properties of 2DEG. The authors of Ref.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Kurakin

Vitusevich

Danylyuk

et al. 2008

Journal of Applied Physics

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The effect of a small dose of gamma irradiation on transport characteristics of the two-dimensional electron gas (2DEG) in AlGaN∕GaN heterostructures was investigated. It is shown that the carrier concentration remains practically unchanged after an irradiation dose of 106rad, while the 2DEG mobility exhibits a considerable increase. The results are explained within a model that takes into account the relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation.

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Section: Introductionmentioning

confidence: 99%

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Kurakin

Vitusevich

Danylyuk

et al. 2008

Journal of Applied Physics

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“…Three samples (A, B, and C) with different SiN x compositions (N=Si) were fabricated on p-type Si substrates. The SiN x films were formed by chemical vapor deposition (CVD) with SiH 2 Cl 2 and NH 3 . The N=Si values were controlled by NH 3 gas supply.…”

Section: Methodsmentioning

confidence: 99%

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

Seki¹,

Kamimuta²,

Mitani³

2018

Jpn. J. Appl. Phys.

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The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si-H bonds in the SiN x thin films.

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“…5 SiN passivation A significant impact of the pretreatment on the transistor degradation has been observed [7] such that a NH 3 plasma pretreatment resulted in a significant improvement in device stability, thus highlighting that the surface conditions of GaN is an important parameter for a good passivation. Here we investigate the impact of the passivation material itself but keep the pretreatment unchanged.…”

Section: Epitaxial Growth and Processingmentioning

confidence: 99%

Trade‐offs between performance and reliability in AlGaN/GaN transistors

Waltereit

Bronner

Quay

et al. 2011

Phys. Status Solidi C

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We report on the trade-off between performance and reliability for AlGaN/GaN transistors. It is shown that changes in epitaxial growth, transistor design and process may lead to an improvement in performance but are, at the same time, accompanied by a degradation of device reliability. As a result we show strategies in order to balance performance and reliability as both are linked. Based on these findings we have realized state-of-the-art power bars for mobile communication systems and X-band MMICs for radar applications

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Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Cited by 120 publications

References 10 publications

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

Trade‐offs between performance and reliability in AlGaN/GaN transistors

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