Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Kurakin, A. M.; Vitusevich, S. А.; Danylyuk, Serhiy; Hardtdegen, H.; Klein, N.; Bougrioua, Z.; Danilchenko, B. A.; Конакова, Р. В.; Belyaev, A. E.

doi:10.1063/1.2903144

Cited by 48 publications

(33 citation statements)

References 35 publications

(21 reference statements)

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“…There was no change for the Schottky gate characteristics or the sheet resistance of the TLM testers after irradiation. Besides the commonly observed drain current enhancement after a low dose c-radiation, Kurakin et al 15 reported a decrease of sheet resistance resulting from an increase of electron mobility through the relaxation of the elastic strain in the HEMT heterostructures. Magnetotransport spectroscopy exhibited a significant decrease in short-range carrier scattering, which was also consistent with the increase of mobility measured by Hall measurements.…”

Section: Resultsmentioning

confidence: 97%

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Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Hwang

Hsieh

Lei

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility transistors (HEMTs) after 60Co γ-irradiation doses of 50, 300, 450, or 700 Gy were measured. The main effects on the HEMTs after irradiation were increases of both drain current and electron mobility. Compton electrons induced from the absorption of the γ-rays appear to generate donor type defects. Drain current dispersions of ∼5% were observed during gate lag measurements due to the formation of a virtual gate between the gate and drain resulting from the defects generated during γ-irradiation.

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Section: Resultsmentioning

confidence: 97%

“…7,12,13 It was also reported that low dose c-irradiations partially relaxed the AlGaN/GaN heterostructure elastic strains and enhanced the electron mobility by around 7-8%. 15 This improvement of the electron mobility could also increase the drain current.…”

Section: Introductionmentioning

confidence: 99%

Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Hwang

Hsieh

Lei

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…It was also reported that low dose γ-irradiations partially relaxed the AlGaN/GaN heterostructure elastic strains and enhanced the electron mobility by around 7-8%. 61,62 This improvement of the electron mobility could also increase the drain current.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

256

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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“…By observing the shift in the peak corresponding to the AlGaN (0004) plane through XRD, they claimed the strain relaxation to be the cause of increased mobility. 23 The effects of a very low dose of 40 Gy gamma radiation on unpassivated HEMTs were later explored by Berthet et al where an increase in I DS was again observed. The Schottky characteristics and gate leakage current remained unchanged, which is not unexpected for such a small dose.…”

mentioning

confidence: 99%

Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors

Lee

Flitsiyan

Chernyak

et al. 2017

ECS J. Solid State Sci. Technol.

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The influence of various radiations on the performance and carrier transport properties of AlGaN/GaN HEMTs have been observed at length over the previous few decades. Gamma irradiation has been shown to have little influence on carrier density but has significant effects on device performance. The effects of gamma irradiation have proven non-monotonic in nature, dividing results into low and high doses with an inflection point near 300 Gy. Low doses of gamma irradiation have a tendency to improve device characteristics, while high doses lead to device degradation. The differences in low versus high doses are highlighted by electron beam induced current and dc characterizations. III-Nitride devices have long been an attractive solution to the ever-increasing high power and speed demands of industry. Of note, AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a contender for these industrial applications investigated due to their high power and speed capabilities.1 Further, AlGaN/GaN HEMT devices do not require additional doping in contrast to AlGaAs/GaAs. Attention to AlGaN/GaN-based devices for potential space and military applications has incited numerous investigations into device radiation hardness.2 Particularly, the effects of high energy radiations on AlGaN/GaN HEMTs have been investigated, as well as p-i-n diodes for solar blind light detectors.Studies of radiation-induced defects in GaN-based devices have attracted significant interest, and much insight exists into the behavior of III-Nitride-based transistors after exposure to energetic ionizing radiation. Investigations of the radiation effects in AlGaN/GaN-based devices employing energetic protons have consistently reported that proton-irradiation results in a decrease in two-dimensional electron gas (2DEG) sheet carrier concentration and a positive threshold voltage shift with increasing proton dose.2-5 Negative threshold voltage shifts and increase in 2DEG sheet concentration have been observed in AlGaN/GaN HEMT structures exposed to 1-MeV neutron irradiation with doses up to 2.5 × 10 15 cm −2 . 6 In contrast to the behavior observed in proton-irradiated HEMTs, negative threshold voltage shifts are also observed in gamma-irradiated devices. 7-9Even at low altitudes, the fluences of high energy protons, electron, and photons may be non-negligible and depend on many factors including the local solar weather. 10 The interaction of highly energetic particles with matter tend to lead to the generation of secondary gamma radiation. Therefore, it becomes critical to interpret the effects of gamma radiation since it is found in low earth orbits and presents with other high energy radiation-matter interactions. Such investigation is very important not only from fundamental point of view, due to obtaining substantial information on the physical properties of semiconductor materials, but it also gives values of the device performance for application in radiation harsh environments.In recent years, the term gamma-ray has been conventionally de...

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Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Cited by 48 publications

References 35 publications

Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Review—Ionizing Radiation Damage Effects on GaN Devices

Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors

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