Improved morphology and crystalline quality of MBE CdZnTe/Si

Almeida, L. A.; Hirsch, Lionel; Martinka, M.; Boyd, P. R.; Dinan, J. H.

doi:10.1007/bf02665842

Cited by 31 publications

(24 citation statements)

References 5 publications

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“…2,3 Si(211) wafer surfaces are initially hydrogen passivated ex situ, using an HF-based solution. Upon loading the Si substrate into the MBE chamber (VG80H, Oxford Instruments), hydrogen is desorbed while ramping to approximately 700°C and exposing the surface to an As 4 flux.…”

Section: Methodsmentioning

confidence: 99%

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

Jacobs

Almeida

Markunas

et al. 2008

Journal of Elec Materi

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Section: Methodsmentioning

confidence: 99%

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

Jacobs

Almeida

Markunas

et al. 2008

Journal of Elec Materi

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“…The buffer layers of zinc telluride and cadmium telluride were deposited as previously reported. 1 The thermocouple temperature for the deposition was 140°C; we believe this to correspond to a real temperature of 290°C because we can reproduce the results of Almeida et al with this thermocouple reading. Five times during each deposition, the CdTe flux was interrupted, a Te flux of 1-2 ϫ 10 Ϫ6 Torr was initiated, and the substrate was heated to 535°C 12 for 15 min to anneal the epilayer.…”

Section: Methodsmentioning

confidence: 72%

“…The most common scheme uses a CdTe buffer layer between the silicon wafer and the MCT epilayers. 1 A 19% lattice mismatch between Si and MCT must be accommodated. Strain relaxation occurs by the formation of misfit dislocations at the interface.…”

Section: Introductionmentioning

confidence: 99%

Threading dislocation removal from the near-surface region of epitaxial cadmium telluride on silicon by lithographic patterning of the substrate

Molstad

Benson

Markunas

et al. 2005

Journal of Elec Materi

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211) oriented silicon substrates were patterned and etched to give mesas of various sizes and shapes. Cadmium telluride epitaxial layers were deposited on the patterned substrates by molecular beam epitaxy (MBE). Dislocation termini in the epilayer were found to be concentrated in the trenches that formed the mesa boundaries. Mesa sizes up to 17 µm were found to be nearly free of threading dislocation termini. Threading dislocation termini are observed to congregate in lines parallel to the Ͻ321Ͼ crystallographic directions. Evidence of subsurface, horizontal dislocations running through the mesa is given.

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“…The semiconductor properties of this material are suitable for application in solar cells and many other optoelectronic devices such as detectors for the infrared and x-ray. [1][2][3][4] The most used techniques used to obtain these films are organo-metalic chemical vapour deposition [5], closed spaced sublimation [6], physical vapour deposition [7], molecular beam epitaxy [8], electrodeposition [9] and sputtering [10]. All these techniques have advantages and disadvantages depending on the type of application intended for the film.…”

Section: Introductionmentioning

confidence: 99%

“…The most used techniques to obtain these films are organometalic chemical vapour deposition [5], closed spaced sublimation [6], physical vapour deposition [7], molecular beam epitaxy [8], electrodeposition [9] and sputtering [10]. All these techniques have advantages and disadvantages depending on the type of application intended for the film.…”

mentioning

confidence: 99%

Characterization of CdTe thin films grown on glass by hot wall epitaxy

Ferreira¹,

Leal²,

Faria³

et al. 2006

Braz. J. Phys.

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In this work we have investigated the properties of CdTe thin films grown on glass substrates by Hot Wall Epitaxy. Its most important feature is the growth at very low temperatures, which would allow the growth even on polymer substrates. Our samples were grown at temperatures between 150 and 250 o C at a growth rate between 0.2 and 2 µm/h. The CdTe films were characterized by x-ray diffraction, scanning electron microscopy and optical transmission. The x-ray teta-2teta scans revealed films with cubic structure and a very high degree of preferential orientation. In fact, for films thicker than 1 µm, no other reflections have been observed on the spectra besides the (111), (333) The production of CdTe thin films has been investigated for many years. The semiconductor properties of this material are suitable for application in solar cells and many other optoelectronic devices such as detectors for the infrared and x-rayThe most used techniques to obtain these films are organometalic chemical vapour deposition [5], closed spaced sublimation [6], physical vapour deposition [7], molecular beam epitaxy [8], electrodeposition [9] and sputtering [10]. All these techniques have advantages and disadvantages depending on the type of application intended for the film. Parameters such as range of deposition temperatures and growth rates obtained, type of substrates used and films produced (epitaxial or polycrystalline) must all be of concern.In this work we describe the production and characterization of CdTe thin films grown on glass substrates. The growth technique used was the Hot Wall Epitaxy (HWE) and the films were characterized by scanning electron micrographs, atomic force microscopy (AFM), x-ray diffraction and optical transmission in the visible and near infrared. I. EXPERIMENTALThe HWE growth system used is shown in Fig. 1. It consists of a two furnace system, for source and substrate, separated by a shutter. The deposition occurs at pressures between 10 −6 and 10 −7 Torr, obtained by a diffusion pump.High purity commercial CdTe (99.999%) was used as source material and the source temperature can be controlled from 400 to 590 o C. In this temperature range CdTe evaporates congruently with more than 98% of CdTe molecules in the vapor. The growth rates obtained were in the range between 0.01 and 10Å/s. In this work we have used growth rates between 0.5 and 5.5Å/s.The HWE is a well established technique able to produce † Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12245-970 São José dos Campos-SP, Brazil Received on , 2003In this work we have investigated the properties of CdTe thin films grown on glass substrates by Hot Wall Epitaxy. Its most important feature is the growth at very low temperatures, which would allow the growth even on polymer substrates. Our samples were grown at temperatures between 150 and 250 o C at a growth rate between 0.2 and 2 m/h. The CdTe films were characterized by xray diffraction, scanning electron microscopy and optical t...

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Improved morphology and crystalline quality of MBE CdZnTe/Si

Cited by 31 publications

References 5 publications

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

Threading dislocation removal from the near-surface region of epitaxial cadmium telluride on silicon by lithographic patterning of the substrate

Characterization of CdTe thin films grown on glass by hot wall epitaxy

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