Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

Jacobs, R. N.; Almeida, L. A.; Markunas, J. K.; Pellegrino, Joseph G.; Groenert, M.; Jaime-Vasquez, M.; Mahadik, Nadeemullah A.; Andrews, Craig; Qadri, S. B.; Lee, T.; Kim, M.

doi:10.1007/s11664-008-0519-z

Cited by 21 publications

(20 citation statements)

References 23 publications

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“…This relationship is shown in Figure 8.4 (for x = 0, x = 0.5, x = 1.0) alongside other reports found in the literature. [48] Lattice parameter (Å) Temperature (K) Reasonable agreement is found with early [47][48][49] and more recent [28,50,51] reports on bulk and MBE material, respectively. Nevertheless, it is evident from Figure 8 [48], which show trends of increasing lattice parameter with decreasing temperature for temperatures below about 50 K. As the thermal expansion coefficient has been observed to be negative below about 80 K [10], such lattice expansion is to be expected for low temperatures.…”

Section: Variation With Temperaturesupporting

confidence: 77%

“…The data of Jacobs et al [51] presented in Figure 8.4 are out of plane lattice parameter values obtained by X-ray diffraction on MBE-grown CdTe layers on Si and Ge substrates, and are affected by thermal stresses and lattice mismatch. Figure 8.4 also shows the anomalous temperature dependence of the lattice parameter of a MOVPE CdTe layer grown on GaAs substrate as reported by Staudenmann et al [48].…”

Section: Variation With Temperaturementioning

confidence: 99%

“…Values for the room-temperature CTE as a function of alloy composition, x , for Hg 1−x Cd x Te from various reports [6,28,29,42,47,[50][51][52][53][54][55][56][57] are summarized in Figure 8.5. Precise control of measurement temperature is not of great importance since in the vicinity of room temperature the CTE for a particular alloy composition exhibits very little temperature dependence.…”

Section: Variation With Xmentioning

confidence: 99%

“…Furthermore, Figure 8.5 includes the results obtained using a capacitive quartz dilatometer by Gadzhiev et al [6] for CdTe synthesized by hot pressing and the sublimationcondensation technique, as well as recent results of Jacobs et al [29,51], who investigated the effects of thermal mismatch between MBE-grown CdTe layers and their corresponding Ge and Si substrates. The latter authors reported CTE values (out of plane lattice expansion) of 4.8 × 10 −6 • C −1 for CdTe/Ge and 7.4 × 10 −6 • C −1 for CdTe/Si, and noted that these values are affected by residual stresses.…”

Section: Variation With Xmentioning

confidence: 99%

See 3 more Smart Citations

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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Section: Variation With Temperaturesupporting

confidence: 77%

Section: Variation With Temperaturementioning

confidence: 99%

Section: Variation With Xmentioning

confidence: 99%

Section: Variation With Xmentioning

confidence: 99%

See 2 more Smart Citations

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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“…5 However, there exists a large lattice parameter difference between HgCdTe and alternative substrates. To minimize the deleterious effects of the large lattice mismatch between the alternative substrates such as Si, Ge, and GaAs and the epilayer, HgCdTe needs to be grown on a buffer layer including CdTe or CdZnTe.…”

Section: à2mentioning

confidence: 99%

Characterization of CdTe Growth on GaAs Using Different Etching Techniques

Bilgilisoy

Özden

Bakali

et al. 2015

Journal of Elec Materi

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CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle-and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 9 10 7 cm À2 to 2 9 10 8 cm À2 range, and trapezoid-shaped etch pits were found in the 1 9 10 7 cm À2 to 7 9 10 7 cm À2 range for samples with thicknesses <2 lm.

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Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

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Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 μm thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 × 10 7 cm −2 was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.

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Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

Cited by 21 publications

References 23 publications

Mechanical and Thermal Properties

Mechanical and Thermal Properties

Characterization of CdTe Growth on GaAs Using Different Etching Techniques

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

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