Improved effective mobility extraction in MOSFETs

Thomas, S.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Lander, R.J.P.; Vellianitis, G.; Watling, J.R.

doi:10.1016/j.sse.2009.09.014

Cited by 10 publications

(3 citation statements)

References 21 publications

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“…16 For SiO 2 / Si with low interface state density, the mobility is in the range of 100-800 cm 2 V À1 s À1 for a sheet electron density of 10 13 -10 11 cm À2 . 17,18 However, the maximum values reported for N s in electron inversion layers formed in Si based MOS structures reach 10 13 cm À2 which is almost one order of magnitude lower compared to the measured values for GaP/Si structures. The higher value of N s and interface defect density for a-GaP:Si/p-Si and lc-GaP:Si/p-Si structures thus could lead to l n reduction in the Si inversion layer at the GaP interface.…”

Section: Resultsmentioning

confidence: 67%

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Journal of Renewable and Sustainable Energy

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Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) layers onto p-type Si wafers for the fabrication of n-GaP/p-Si heterojunction solar cells. PE-ALD was realized at 380 C with continuous H 2 plasma discharge and the alternate use of phosphine and trimethylgallium as sources of P and Ga atoms, respectively. The layers were doped with silicon thanks to silane (SiH 4) diluted in H 2 that was introduced as a separated step. High SiH 4 dilution in H 2 (0.1%) allows us to deposit stoichiometric GaP layers. Hall measurements performed on the GaP:Si/p-Si structures reveal the presence of an n-type layer with a sheet electron density of 6-10 Â 10 13 cm À2 and an electron mobility of 13-25 cm 2 V À1 s À1 at 300 K. This is associated with the formation of a strong inversion layer in the p-Si substrate due to strong band bending at the GaP/Si interface. GaP:Si/p-Si heterostructures exhibit a clear photovoltaic effect, with the performance being currently limited by the poor quality of the p-Si wafers and reflection losses at the GaP surface. This opens interesting perspectives for Si doped GaP deposited by PE-ALD for the fabrication of p-Si based heterojunction solar cells.

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Section: Resultsmentioning

confidence: 67%

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Journal of Renewable and Sustainable Energy

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“…Once C gc and C gb are successfully measured using the TDR method, extracting μ eff values from split C-V curves and I d -V g curves in the linear operation region is straightforward [19], [20] …”

Section: (A) and (B) (Ground-signal-ground Configuration)mentioning

confidence: 99%

Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

Kim

Lee

Jung

et al. 2015

IEEE Trans. Electron Devices

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The effective mobility (µ eff ) of MOSFETs with ultrathin high-k gate dielectric (EOT = 0.85 nm) has been successfully extracted using a time domain reflectometry method. A ground-signal-ground-ground probe configuration is used to analyze the gate-to-channel capacitance (C gc ), gate-to-bulk capacitance (C gb ), and total gate capacitance (C g ) without a complex RF test structure. Using this method, the effective mobility can be extracted even in the presence of a high gate leakage current (∼30 A/cm 2 ) when the conventional split capacitance-voltage method using an impedance analyzer cannot be applied. IndexTerms-Effective mobility, MOSFET, split capacitance-voltage (C-V ), time domain reflectometry (TDR).

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“…As an example, kagome-lattice naturally hosts fast-moving Dirac fermions which are feasible for high mobility electronic devices [12][13][14]. However, the typical mobility of existing kagome-lattice crystals is ~100 to 1000 cm 2 V -1 s -1 [20,24,25], much smaller than the typical Dirac electron systems (such as graphene, ~10 4 cm 2 V -1 s -1 ) [26][27][28] and high performance MOSFET materials (e.g., GaAs, ~10 4 cm 2 V -1 s -1 ) [29][30][31]. Therefore, careful material optimization and tuning of the band structure would be a necessity to achieve kagome-lattice crystals with superior transport properties and facilitate kagome-lattice materials applications in electronic and spintronic devices.…”

Section: Introductionmentioning

confidence: 99%

Kagome晶格补偿型半金属Ni3In2S2创纪录的高迁移率和极大磁电阻现象

Fang

Lyu

et al. 2023

Sci. China Mater.

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The kagome-lattice crystal hosts various intriguing properties including the frustrated magnetism, charge order, topological state, superconductivity and correlated phenomena. To achieve high-performance kagome-lattice compounds 2 for electronic and spintronic applications, careful tuning of the band structure would be desired. Here, the electronic structures of kagome-lattice crystal Ni3In2S2 were investigated by transport measurements, angle-resolved photoemission spectroscopy as well as ab initio calculations. The transport measurements reveal Ni3In2S2 as a compensated semimetal with record-high carrier mobility (~8683 cm 2 V -1 S -1 and 7356 cm 2 V -1 S -1 for holes and electrons) and extreme magnetoresistance (15518% at 2 K and 13 T) among kagome-lattice materials. These extraordinary properties are well explained by its band structure with indirect gap, small electron/hole pockets and large bandwidth of the 3d electrons of Ni on the kagome lattice. This work demonstrates that the crystal field and doping serve as the key tuning knobs to optimize the transport properties in kagome-lattice crystals. Our work provides material basis and optimization routes for kagome-lattice semimetals as electronics and spintronics applications.

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Improved effective mobility extraction in MOSFETs

Cited by 10 publications

References 21 publications

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry

Kagome晶格补偿型半金属Ni3In2S2创纪录的高迁移率和极大磁电阻现象

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