IEEE Trans. Electron Devices
 2009
DOI: 10.1109/ted.2009.2030721
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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon–Germanium Strain-Relaxed Buffer as a Design Parameter

Olayiwola Alatise
1
,
Kelvin S. K. Kwa
2
,
SH Olsen
3
et al.
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Cited by 3 publications
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