Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET

Hosseini, Reza

doi:10.1007/s10825-016-0826-1

Cited by 5 publications

(6 citation statements)

References 27 publications

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“…Step3: A quantum transport equation of electrons moving in the sub-bands is solved based on NEGF formalism, in which the UMS approach is used for the electron charge density. 27,30 Electron charge density is: 28,29…”

Section: Simulation Methodsmentioning

confidence: 99%

“…Once convergence is achieved, the current is computed. 28,29,31 Probability of electron scattering is almost vanished in silicon transistors with a channel length smaller than 45 nm; 32,33 consequently, ballistic transport model is used in our simulations. Since Von Neumann boundary condition ensures the charge neutrality for ballistic devices in the source and drain regions, this condition is considered both in the source and the drain.…”

Section: Simulation Methodsmentioning

confidence: 99%

“…Since Von Neumann boundary condition ensures the charge neutrality for ballistic devices in the source and drain regions, this condition is considered both in the source and the drain. 28,29 Also, the Dirichlet boundary condition is applied to the gate contact. 34 It should be noted that the transport equation for holes is obtained by substituting hole effective masses instead of electron ones and valence band edge instead of the conduction band edge.…”

Section: Simulation Methodsmentioning

confidence: 99%

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Junctionless Field Effect Diode (JL-FED): A First-Principles Study

Vadizadeh¹

2019

ECS J. Solid State Sci. Technol.

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This paper proposes a novel field effect diode (FED) for the first time namely junctionless FED (JL-FED). Our simulation results show that JL-FED gives the combined advantages of conventional FED and JL field effect transistor (JL-FET). In fact, not only fabrication process of the JL-FED is easier than FED, but also unlike a FED, JL-FED device turns on without applied biases to the control gates. Furthermore, to reduce the leakage current of the JL-FED structure, we propose modified JL-FED (MJL-FED) structure, in which the control gates work functions are different from that of JL-FED. The digital performance parameters such as ION/IOFF ratio and subthreshold slope (SS) for MJL-FED are investigated using 2-D simulations. MJL-FED offers superior ION/IOFF ratio and SS than its JL-FED counterpart having same dimensions. Our simulation results show that MJL-FED provides channel length scaling possible down to 10 nm, and it is a reasonable candidate for logic transistor applications.

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Section: Simulation Methodsmentioning

confidence: 99%

Section: Simulation Methodsmentioning

confidence: 99%

Section: Simulation Methodsmentioning

confidence: 99%

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Junctionless Field Effect Diode (JL-FED): A First-Principles Study

Vadizadeh¹

2019

ECS J. Solid State Sci. Technol.

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“…1 MOSFET 2 Junctionless (JL) 3 Short Channel Effects (SCEs) 4 Tunnel Field Effect Transistor (TFET) 5 Inversion Mode (IM) 6 On Current (Ion) 7 Heterojunction 8 Strained Silicon 9 Band to Band Tunneling (BBT) 10 Off Current (Ioff) 11 Drain Induced Barrier Lowering (DIBL) 12 Junctionless Tunnel FET (JL TFET) 13 Multi Material Double Gate (MM DG) 14 non-local band to band tunneling model 15 Fermi Dirac Statics 16 Shockley Read Hall (SRH) 17 Dual Material (DM) 18 Single Material (SM)…”

Section: ‫زیر‬ ‫نویس‬ ‫ها‬mentioning

confidence: 99%

Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor

Bashiri

Hosseini

2021

Journal of Iranian Association of Electrical and Electronics En

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“…Therefore it is important to reduce the computational time required for NEGF device simulations; for instance, by applying information-scientific viewpoint [11,12,13,14]. As a representative example, consider double-gate MOSFET (DG-MOSFET) [15,16,17,18,19,20,21]. The precise two-dimensional distribution pattern of the electrostatic potential and the carrier density in the x-z plane (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Acceleration of nonequilibrium Green’s function simulation for nanoscale FETs by applying convolutional neural network model

Souma

Ogawa

2020

IEICE Electron. Express

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We investigate the application of convolutional neural networks (CNNs) to accelerate quantum mechanical transport simulations (based on the nonequilibrium Green's function (NEGF) method) of double-gate MOSFETS. In particular, given a potential distribution as input data, we implement the convolutional autoencoder to train and predict the carrier density and local quantum capacitance distributions. The results indicate that the use of a single trained CNN model in the NEGF self-consistent calculation along with Poisson's equation produces accurate potentials for a wide range of the gate lengths, and all within a significantly shorter computational time than the conventional NEGF calculations.

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Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET

Cited by 5 publications

References 27 publications

Junctionless Field Effect Diode (JL-FED): A First-Principles Study

Junctionless Field Effect Diode (JL-FED): A First-Principles Study

Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor

Acceleration of nonequilibrium Green’s function simulation for nanoscale FETs by applying convolutional neural network model

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