Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET

Wadhwa, Girish; Singh, Jeetendra

doi:10.1007/s00339-020-04065-5

Cited by 17 publications

(8 citation statements)

References 42 publications

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“…It is a gate stacked linearly graded work function VTFET (SG-LGW-VTFET with air pocket) such that it varies unceasingly and linearly with '' (mole division) metric of combined metals (A and B). This can be given as follows [14]:…”

Section: Gate Stacked Linearly Graded Work Function Metal Electrode V...mentioning

confidence: 99%

“…where φA and φB are the work functions of metals A and B, while ρA and ρB are the densities of state found for metals A and B. With the unity value of the electronic specific heat ratio, the metric φ() of a metal alloy is further evaluated as [14]: In addition, a dielectric pocket is incorporated into the device structure for better tunneling, higher ON current and transconductance. Fig.…”

Section: Gate Stacked Linearly Graded Work Function Metal Electrode V...mentioning

confidence: 99%

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Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket

Selvi¹,

Dhanalakshmi²

2022

J. Nano- Electron. Phys.

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In the present paper, the linearly graded work function (LG-W) characteristics are explored by using binary metal alloy ab1 - gate electrode composition in a high-k gate stack with a dielectric pocket in vertically aligned TFET (VTFET). The VTFET device is constructed using a binary metal alloy gate electrode with a linearly graded work function and an air pocket. The proposed structure performance metrics are evaluated and compared to the state-of-the-art. The integration of LG-W with gate-stack VTFET along with air pocket, namely SG-LG-VTFET with air pocket, reveals performance improvement via metrics such as device ON-current (ION), subthreshold swing (SS), transconductance (gm) as well as transconductance generation efficiency (TGE). SG-LG-VTFET with air pocket generates SS of 13.92 mV/dec. Further, the device exhibits a higher ION (3.610 -5 A/µm) with an ION/IOFF ratio of 10 12 . Due to the inclusion of the LG-W and air pocket, a narrow band-bending is observed, thus resulting in higher tunneling and steeper SS. A high-k stacked dielectric material enhances the capacitive coupling. The performance of the device is compared with the VTFET device in the absence of a dielectric pocket. The dielectric pocket increases the electric field, which is a desirable phenomenon for increasing the ON-current. For future applications, the scaling in SS is further possible that can increase the electron tunneling rate.

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Section: Gate Stacked Linearly Graded Work Function Metal Electrode V...mentioning

confidence: 99%

Section: Gate Stacked Linearly Graded Work Function Metal Electrode V...mentioning

confidence: 99%

Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket

Selvi¹,

Dhanalakshmi²

2022

J. Nano- Electron. Phys.

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“…For simulation, the Silvaco TCAD Atlas tool has been used. The Shockley-Read-Hall model and band-toband tunneling have been used for generation-recombination of electron-hole pairs, and self-consistent coupled Schrödinger Poisson model has been used to derive electron density [12]. The non-equilibrium green function model (NEGF model) solves these coupled equations through a stable and oscillation-less iteration [13].…”

Section: Device Design and Simulation Parametersmentioning

confidence: 99%

Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor

Verma

Singh

Tripathi³

et al. 2021

Silicon

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In this work, an ultrathin 3 nm nanowire field-effect transistor (NWFET) based ammonia gas sensor is designed, and its sensitivity is analyzed at room temperature. The designed NWFET for gas sensing is observed to have a higher ratio of ION to IOFF than 10 9 , lower DIBL and better gate controlling due to a higher surface to volume ratio. The gas-sensing performance analysis has been done for three different catalysts, iridium (Ir), ruthenium (Ru), and palladium (Pd), by gradually increasing the work function by a difference of 50meV. The device showed higher OFF current sensitivity compared to ON current sensitivity. The power consumption and threshold voltage are observed to be least for palladium catalytic gate electrodes making palladium the most favorable catalytic for ammonia gas for the designed gas sensor.

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“…-e-mail: shailendras.ec.18@nitj.ac.in Design and Investigation of Gate Stacked Vertical TFET with N + SiGe pocket doped heterojunction for performance enhancement will significantly boost the tunneling current density as it is not directly dependent on the device's channel thickness [23][24][25]. To improve the current ratio, it has also been reported that by introducing the delta-doped or pocket layer in the middle of the source channel area of the low bandgap of Si0.2Ge0.8 material will improve the current ratio and the subthreshold slope, which was earlier restricted to the range of 30-50 mV/dec [26,27]. However, individually, these methods effectively work to the system but not efficient when it comes to the high-performance requirement of densely packed circuits.…”

Section: Introductionmentioning

confidence: 99%

Design and Investigation of Gate Stacked Vertical TFET with N+ SiGe Pocket Doped Heterojunction for Performance Enhancement

Gupta¹,

Wariya²,

Singh³

2021

Preprint

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In this paper, a novel delta-doped N + Silicon-Germanium Gate Stacked Triple Metal Gate Vertical TFET (Delta doped N + GS TMG VTFET) is proposed and investigated using the Silvaco TCAD simulation tool. Four different combinations were presented and compared with and without the gate stacking method and Si0.2Ge0.8 N + pocket delta-doped layer to render the optimized results. Among all, Delta doped N + GS TMG VTFET structure comes out with a very steep sub-threshold slope (9.75 mV/dec), 40 % lower than the first configuration of TMG VTFET. The inclusion of the N + delta-doped layer between the source and channel and gate will enhance the ON-state drive current performance by reducing the OFF-state leakage current. This happens due to the lower bandgap of the N + delta-doped layer cause narrow BTBT, which results in a high drive current. The Triple metal gate is designed to mitigate the ambipolar conduction by modulating the optimized wok function at 4.15, 4.3, and 4.15 eV. The distribution of the source channel in the vertical structure will enhance the device's scalability due to the electron tunneling moves in the vertical electric field direction. The optimally constructed structure demonstrates improved performance, such as a high ION/IOFF current ratio (~ 1013) and sub-threshold voltage (0.33 V). The results obtained from the proposed device make it suitable for the ultra-low-power device application.

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Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET

Cited by 17 publications

References 42 publications

Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket

Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket

Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor

Design and Investigation of Gate Stacked Vertical TFET with N+ SiGe Pocket Doped Heterojunction for Performance Enhancement

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