Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor

Verma, Chhaya; Singh, Jeetendra; Tripathi, Santosh Kumar; Kumar, Rajeev

doi:10.1007/s12633-021-01381-0

Cited by 6 publications

(3 citation statements)

References 28 publications

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“…3: The work function increases automatically in response to an increase in the amount of gas diffusing on the sensor surface, decreasing the drain current in both the on and off states. When the work function rises, a significant amount of small charge carriers build up at the channel, 36 causing the depletion layer to form at the surface. The density of gas needed for the workfunction variation in sensing is 0.5 to 10 ppm.…”

Section: Results and Analysismentioning

confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

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Metal oxide semiconductor gas sensors are used in various roles and sectors compared to other sensing technology due to their durability, longevity, and sensing capability. The current work proposes a dual-stacked heterogeneous source lateral n-type tunnel field-effect transistor (DSHS-nTFET) for gas sensing applications. In the device’s tunneling junction, the presence of source stack boosts the electric field, reduces tunneling width, and then enhances the band-to-band tunneling. Catalytic metals used as gate contacts for this double source stacking TFET design are explored for the purpose of detecting specific gases. Platinum (Pt), Cobalt (Co), Palladium (Pd), and Silver (Ag) are the metal gate electrodes utilised to sense the target gases, like Carbon-monoxide (CO), Ammonia (NH3), Hydrogen (H2), and Oxygen (O2), respectively. With the aid of the Sentaurus TCAD simulator, the suggested structure has been examined for a number of electrical parameters including electric field, surface potential, drain current, and numerous sensing characteristics pertaining to adsorption of gas molecules. The sensitivity and reliability of the proposed sensor have also beeninvestigated with respect to temperature fluctuations, and it has been shown that the device is largely stable over the 200–400 K range.

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Section: Results and Analysismentioning

confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

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“…When gas diffused on the sensor surface increases, the work function automatically corresponds to increasing, which reduces the drain current at the on and off state. As the work function increases, a large number of minority charges accumulate at the channel, 50 which leads to forming the depletion layer at the surface, resulting from the high gate voltage required to turn On the device. 51 The rate of change in I ON and I OFF depends on the concentration of gas molecules, the drop-off rate in ION is more than in I OFF .…”

Section: Resultsmentioning

confidence: 99%

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Liana¹,

Choudhuri²,

Bhowmick³

2023

ECS J. Solid State Sci. Technol.

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Sensing and detecting gases is crucial from the application point of view. The essential condition for present-time gas sensors is light, compact, less power dissipation, highly sensitive, thermally stable, and a good selection regarding several gases. Due to the significant potential and modulation of the energy band gap, two-dimensional materials have recently attracted researchers’ attention. Graphene nanoribbon (GNR) is one of the candidates from the two-D material; it is extracted from the strip of one-dimensional graphene material, which can be a suitable contender for gas sensing devices. Therefore, in this work, a detailed investigation of a gas sensor for various gases is reported by employing two-dimensional material-based DG-GNR VTFET as a sensor. Different gases, including Oxygen, Ammonia, and Hydrogen have been scrutinized for sensitivity and stability in several temperature ranges. In the present work, several catalytic metals are utilized in the gate electrode of the proposed device architecture for the different gas sensing applications. The intrinsic physics of the proposed gas sensor has been carried out in detail in the factor of different gas molecules and gas pressure. Finally, the temperature parameter varies to analyze the stability of the proposed device sensor within 200-400 K.

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“…The most straight-forward type is the chemiresistor which is effectively a variable resistor, whereby the resistance of the semiconductor strip changes as an effect of molecular adsorption on its surface, shown in Figure 10 a [ 109 , 110 , 111 , 112 , 113 , 114 ]. A chemiresistive sensor can also be based on the conduction in a thin nanowire [ 115 , 116 ]. Alternatively, a FET-based gas sensor, sometimes referred to as a thin-film transistor (TFT) gas sensor, is also commonly applied, whereby a back gate is used to control the electrostatics of the channel, effectively allowing (ON-state) or preventing (OFF-state) current flow between the source and drain, shown in Figure 10 b [ 109 , 114 , 117 , 118 , 119 , 120 ].…”

Section: Semiconductor-based Gas Sensor Typesmentioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

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Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor

Cited by 6 publications

References 28 publications

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

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