In the present paper, the linearly graded work function (LG-W) characteristics are explored by using binary metal alloy ab1 - gate electrode composition in a high-k gate stack with a dielectric pocket in vertically aligned TFET (VTFET). The VTFET device is constructed using a binary metal alloy gate electrode with a linearly graded work function and an air pocket. The proposed structure performance metrics are evaluated and compared to the state-of-the-art. The integration of LG-W with gate-stack VTFET along with air pocket, namely SG-LG-VTFET with air pocket, reveals performance improvement via metrics such as device ON-current (ION), subthreshold swing (SS), transconductance (gm) as well as transconductance generation efficiency (TGE). SG-LG-VTFET with air pocket generates SS of 13.92 mV/dec. Further, the device exhibits a higher ION (3.610 -5 A/µm) with an ION/IOFF ratio of 10 12 . Due to the inclusion of the LG-W and air pocket, a narrow band-bending is observed, thus resulting in higher tunneling and steeper SS. A high-k stacked dielectric material enhances the capacitive coupling. The performance of the device is compared with the VTFET device in the absence of a dielectric pocket. The dielectric pocket increases the electric field, which is a desirable phenomenon for increasing the ON-current. For future applications, the scaling in SS is further possible that can increase the electron tunneling rate.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.