Impedance spectroscopy analysis of AlGaN/GaN HFET structures

Paszkiewicz, B.

doi:10.1016/s0022-0248(01)01265-9

Cited by 24 publications

(16 citation statements)

References 3 publications

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“…All heterostructures presented in this paper are Ga-polar. For each sample the 2DEG at the AlGaN/GaN interface has been detected in C-V [18] and Hall measurements to be in the range of 2-6 × 10 12 cm −2 . Four samples are presented in this paper.…”

Section: Methodsmentioning

confidence: 99%

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Kudrawiec

Syperek

Misiewicz

et al. 2004

Superlattices and Microstructures

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Section: Methodsmentioning

confidence: 99%

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Kudrawiec

Syperek

Misiewicz

et al. 2004

Superlattices and Microstructures

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“…As a result, the 2DEG concentrations and differential drift mobility of the tested AlGaN/GaN hetrostructures were obtained without the need of test structures fabrication. The details of the evaluation procedure were presented earlier [15,16]. Comparison between capacitance spectra of AlGaN/AlN/GaN heterostructures grown on sapphire (sample F) and silicon (sample E) substrates is presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Wośko

Paszkiewicz

Szymański

et al. 2015

Journal of Crystal Growth

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“…The details of the measurement procedure were discussed previously [9]. Capacitance and conductance versus frequency characteristics of GaN:Mg layers were measured in dependence of dc bias and the results were fitted to the worked-out model (Fig.…”

Section: Methodsmentioning

confidence: 99%

Study of the activation process of Mg dopant in GaN:Mg layers

Paszkiewicz

Szyszka

et al. 2006

Phys. Status Solidi (c)

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GaN:Mg layers with different concentration of Mg dopant were grown by metalorganic vapour phase epitaxy. The incorporation of Mg was verified by secondary ion mass spectroscopy. In order to dissociate Mg-related complexes and thus electrically activate the acceptor dopant, the as-grown layers were annealed in pure N 2 at ~800 °C for 30 minutes. The influence of the post-growth annealing on the layer properties was studied by photoluminescence (PL) and impedance spectroscopy. Impedance spectroscopy measurement showed that the annealed samples reveal higher charge concentrations and lower sheet resistance. Moreover, the relaxation time of hole traps decreased in annealed samples by one order of magnitude compared to as-grown samples. The changes in the electrical properties have been correlated with the changes in the PL spectra.

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Impedance spectroscopy analysis of AlGaN/GaN HFET structures

Cited by 24 publications

References 3 publications

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Study of the activation process of Mg dopant in GaN:Mg layers

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