Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Paszkiewicz, R.; Paszkiewicz, B.; Tłaczała, M.

doi:10.1016/j.spmi.2004.09.021

Cited by 13 publications

(7 citation statements)

References 23 publications

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“…3) related to the band-to-band transition which corresponds to the band-gap energy (E g ). The similar results are shown by other researches [15][16] .…”

Section: Experimental Methodssupporting

confidence: 91%

Microstructure and Optical Properties of Al[sub x]Ga[sub 1−x]N∕GaN Heterostructure Thin Films Grown on Si(111) Substrate by Plasma Assisted Metalorganic Chemical Vapor Deposition Method

Sutanto¹,

Subagio²,

Supriyanto³

et al. 2008

AIP Conference Proceedings

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“…3) related to the band-to-band transition which corresponds to the band-gap energy (E g ). The similar results are shown by other researches [15][16] .…”

Section: Experimental Methodssupporting

confidence: 91%

Microstructure and Optical Properties of Al[sub x]Ga[sub 1−x]N∕GaN Heterostructure Thin Films Grown on Si(111) Substrate by Plasma Assisted Metalorganic Chemical Vapor Deposition Method

Sutanto¹,

Subagio²,

Supriyanto³

et al. 2008

AIP Conference Proceedings

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“…The last effects can lead to strong built-in electric fields and a significant manifestation of the Franz-Keldysh effect in this material system. 10,24,25 We believe that the mentioned effects influence the accuracy of the determination of exciton energy and linewidth from PR spectra and they can be one of sources of the scattering of Varshni and Bose-Einstein parameters in the literature. The temperature dependence of the broadening parameter ⌫͑T͒ for FXA and FXB transitions has been analyzed by the following formula:…”

Section: Resultsmentioning

confidence: 99%

Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers

Kudrawiec

Rudziński

Serafińczuk

et al. 2009

Journal of Applied Physics

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Photoreflectance has been applied to study the exciton energies and linewidths for hetero-and homoepitaxial GaN layers ͑i.e., GaN layers grown on sapphire and truly bulk GaN crystal obtained by ammonothermal method͒. In order to modulate the built-in electric field inside the samples and eliminate photoluminescence signal from photoreflectance spectra, the surface band bending was modulated by the laser light with the photon energy smaller than the energy gap of GaN, i.e., a 532 nm laser line. The Varshni-type and Bose-Einstein-type parameters that describe the temperature dependence of the exciton transition energies have been evaluated and compared for the two GaN epilayers. It has been concluded that the residual strain in the heteroepitaxial layer influences the exciton transition energy but does not influence the Varshni and Bose-Einstein parameters. It has been found that this strain significantly influences the exciton linewidth. The broadening parameter, which is associated with the temperature-independent mechanisms ͑⌫ 0 parameter corresponding to the exciton linewidth at 0 K͒, has been found to be ϳ1 meV for the homoepitaxial layer. For the heteroepitaxial layer this parameter is twice higher ͑this work͒ or few times higher ͑previous papers͒.

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“…Except for sample A1, all spectra show fringes above the Al-GaN bandgap energy, which are attributed to the Franz-Keldysh effect, the so-called Franz-Keldysh oscillations (FKOs). Such FKOs features have been commonly observed in PR spectra of III-V semiconductors and structures and have been attributed to the modulation of the built-in electric fields present at the layer surface and/or layers' interfaces [30,31,49,50]. To obtain the electric field of the AlGaN films, the FKO period is analyzed within the asymptotic expression of PR [19,49].…”

Section: Resultsmentioning

confidence: 99%

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Bouzidi

Alshammari

Soltani

et al. 2021

Materials Science and Engineering: B

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Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Cited by 13 publications

References 23 publications

Microstructure and Optical Properties of Al[sub x]Ga[sub 1−x]N∕GaN Heterostructure Thin Films Grown on Si(111) Substrate by Plasma Assisted Metalorganic Chemical Vapor Deposition Method

Microstructure and Optical Properties of Al[sub x]Ga[sub 1−x]N∕GaN Heterostructure Thin Films Grown on Si(111) Substrate by Plasma Assisted Metalorganic Chemical Vapor Deposition Method

Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

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