Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Wośko, Mateusz; Paszkiewicz, B.; Szymański, Tomasz; Paszkiewicz, R.

doi:10.1016/j.jcrysgro.2014.10.048

Cited by 17 publications

(13 citation statements)

References 16 publications

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“…This is consistent with other reports of AlN buffer layer growth on Si, where the growth temperature has been intentionally reduced to $600 C in order to minimize interfacial SiN x formation. 40 We do note the possibility for some Si-N bond formation to occur via reaction with background NH 3 in the GSMBE during the Al pre-exposure. However, the amount of interfacial Si-N bonding formed in this manner was likely minimal as Si-N was not observed by XPS of the Si wafer after thermal desorption cleaning in the GSMBE with similar background NH 3 levels.…”

Section: Methodsmentioning

confidence: 82%

“…4. Since AlN buffer layers for GaN heteroepitaxy on Si are sometimes grown at lower temperatures and then annealed at higher temperatures, 40 we performed an additional growth where the AlN was initially grown at 600 C and then the growth temperature was ramped to 1000 C. In this case, we determined a slightly lower VBO of À3.3 6 0.2 eV with a correspondingly higher CBO of 1.8 6 0.2 eV.…”

Section: Resultsmentioning

confidence: 99%

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Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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Articles you may be interested inSmall valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689 Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fieldsDependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstructionTo advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050 C) and Al pre-exposures (1-15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be À3.5 6 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 6 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be À2.7 6 0.3 and À0.4 6 0.3 eV, respectively. V C 2015 AIP Publishing LLC.

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Section: Methodsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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“…Very recently a few groups reported the presence of conducting channels inside the HEMT buffer owing to a strong spontaneous polarization introduced by a thick LT AlN IL of 15 nm embedded in non-intentionally C-doped GaN [20,21]. This conducting channel severely deteriorates the buffer BD voltage by making only part of the entire buffer (i.e.…”

Section: Electric Characteristicsmentioning

confidence: 99%

“…Insertion of low temperature (LT) AlN interlayer (IL) has been reported by many groups as an efficient way for stress management and crystal quality improvement [6][7][8][9][10][11][12][13][14][15][16][17][20][21][22][23][24][25][26]. The relaxation of LT AlN IL can introduce additional compressive stress into the (Al)GaN layer grown on top due to the smaller in-plane lattice constant of AlN.…”

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confidence: 99%

MOCVD growth of DH‐HEMT buffers with low‐temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Zhao

Liang

Kandaswamy

et al. 2016

Phys. Status Solidi C

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In this work, we have systematically investigated the technique of low‐temperature AlN interlayer in MOCVD growth of double heterojunction high‐electron‐mobility transistors buffer stacks on 200 mm Si (111) substrates. We have demonstrated that a continuous compressive stress can be maintained by insertion of interlayers which compensated a large tensile stress during cooling for a thick buffer. This eventually led to a low wafer bow and a good surface quality that enabled wafers with full device stack meeting the specifications for processing in our 200 mm CMOS pilot line. We also demonstrated at both forward and reverse bias conditions a significantly improved vertical buffer breakdown voltage (which is defined at a leakage current of 1 µA/mm2 in the present work) of >500 V at 25 °C and >300 V at 150 °C, respectively. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The most interesting observation is the existence of high carrier concentration not only at the AlGaN/GaN interface but also in the region of LT (low temperature): AlN. This means that a parasitic channel for electrons exists in the structure which may result in significant deterioration of transistor parameters [14].…”

Section: Algan/gan/si Heterostructuresmentioning

confidence: 99%

Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Szyszka

Obłąk

Szymański

et al. 2016

Materials Science-Poland

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The applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

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Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Cited by 17 publications

References 16 publications

Band alignment at AlN/Si (111) and (001) interfaces

Band alignment at AlN/Si (111) and (001) interfaces

MOCVD growth of DH‐HEMT buffers with low‐temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

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