Band alignment at AlN/Si (111) and (001) interfaces

Abstract

Articles you may be interested inSmall valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689 Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fieldsDependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstructionTo advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050 C) and Al pre-exposures (1-15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be À3.5 6 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 6 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be À2.7 6 0.3 and À0.4 6 0.3 eV, respectively. V C 2015 AIP Publishing LLC.

Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell

“…The same approach is used for Cu x Te. Lastly, with different thicknesses (0.2–3 nm) of the Al 2 O 3 layer, XPS measurement is sensitive to both of Cu x Te and Al 2 O 3 , which is consistent with the literatures. − These samples allow determining the valence band offset.…”

Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

“…Interfacial band offsets are key ingredients in design of technologically important heterostructures. However, they are not often directly measured (37)(38)(39) and almost never k-resolved. Direct measurement of the band offset between NbN and GaN along with the k-resolved band structures of the constituent materials and their heterointerface enables integration of NbN into the general electronic materials framework; this sets the stage for streamlined design, modeling, and understanding of fully integrated NbN-based superconductor/ semiconductor devices (Josephson junctions with integrated gain, single-photon detectors, etc.).…”

Momentum-resolved electronic band structure and offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

“…Interfacial band offsets are key ingredients in design of technologically important heterostructures. However, they are not often directly measured 36,37,38 and almost never kresolved. Direct measurement of the band offset between NbN and GaN along with the kresolved band structures of the constituent materials and their heterointerface enables integration of NbN into the general electronic materials framework; this sets the stage for streamlined design, modelling, and understanding of fully integrated NbN-based superconductor/semiconductor devices (Josephson junctions with integrated gain, singlephoton detectors, etc).…”