Impedance Characteristics and Chip-Parasitics Extraction of High-Performance VCSELs

Hamad, Wissam; Sanayeh, Marwan Bou; Hamad, Mustapha; Hofmann, Werner

doi:10.1109/jqe.2019.2953710

Cited by 13 publications

(20 citation statements)

References 17 publications

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“…In order to derive the total small-signal modulation response H TOT (ω) of a MM VCSEL, its intrinsic transfer function H int (ω) is multiplied by the extrinsic transfer function of its parasitic network H par (ω). This extrinsic response was recently developed for high-performance MM VCSELs [10]. In physical real-world devices, the intrinsic dynamic behavior is usually embedded in such a cascaded network that includes different parasitic elements, such as the submount and laser chip parasitics.…”

Section: Circuit Simulation Resultsmentioning

confidence: 99%

Equivalent Circuit Model of High-Performance VCSELs

2020

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In this work, a general equivalent circuit model based on the carrier reservoir splitting approach in high-performance multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. This model accurately describes the intrinsic dynamic behavior of these VCSELs for the case where the lasing modes do not share a common carrier reservoir. Moreover, this circuit model is derived from advanced multi-mode rate equations that take into account the effect of spatial hole-burning, gain compression, and inhomogeneity in the carrier distribution between the lasing mode ensembles. The validity of the model is confirmed through simulation of the intrinsic modulation response of these lasers.

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Section: Circuit Simulation Resultsmentioning

confidence: 99%

Equivalent Circuit Model of High-Performance VCSELs

2020

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“…Figure 11 depicts an equivalent circuit of an oxide-confined VCSEL with the circuit components labeled on the schematic cross-sectional view in Figure 2. The smallsignal circuit model portrays the microwave performance of VCSELs [21,93,[99][100][101][102][103][104][105]. A VCSEL is biased with a current bias, I tot , and the pumping current flowing through the intrinsic active-region laser junction is denoted as I a .…”

Section: Small-signal Modelingmentioning

confidence: 99%

“…Adopting low-k material can extend the cut-off frequency and further improve the impact of the RC low-pass behavior on the optical modulation response [65,100]. Likewise, removing the area of the layer underneath the contact pads can also reduce the capacitance when fabricating high-impedance co-planar transmission lines [105].…”

Section: Layout Optimizationsmentioning

confidence: 99%

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.

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“…The shunt resistance is assumed as 1 TΩ, which is located in the equivalent circuit model. [25][26][27][28] In addition, R cont and L cont respectively denote the contact resistance and inductance with corresponding values of 00 Ω and 1.7 nH. Among them, L cont is also accompanied by a resistance of 0.21 Ω.…”

Section: Lasing and Modulation Of The Mm-vcsel Arraymentioning

confidence: 99%

Regional Pulsewidth and Delay Nonuniformity of Modulated 940 nm Vertical‐Cavity Surface‐Emitting Laser Array

Cheng

et al. 2022

Advanced Photonics Research

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Under pulsed modulation, the emission uniformity in terms of pulsewidth and delay of a 940 nm multimode vertical‐cavity surface‐emitting laser (MM‐VCSEL) array is characterized by analyzing the position‐dependent pulsating and chirping dynamics among localized 600 VCSEL elements. In addition, the MM‐VCSEL array biased nearly threshold current (Ith) of 350 mA with a low resistance of 0.72 Ω reveals serious impedance mismatching with a high reflection coefficient (Γ) of −0.97. The MM‐VCSEL array biased below threshold (at Idc: ≈0.9 Ith) reveals low‐impedance and high‐capacitance behavior to result in large modulation reflection with allowable −3 dB bandwidth of 0.8 GHz. The nonuniform optical intensity and delay distribution among all MM‐VCSEL elements corroborate that the gradually enlarged inductance attenuates the modulation current away from bond wires. By modulating the 0.9Ith‐biased MM‐VCSEL array with an 127 ps‐wide electrical pulse with a peak amplitude of 15.3 V, a multimode fiber probe collects the single MM‐VCSEL output with average power, peak voltage, and pulsewidth of 0.08 mW, 25.1 mV, and 602 ps. The delay time as large as 273.4 ps between the nearest and farthest parts of local MM‐VCSEL elements in the array determines its impulse response and uniformity for applications.

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Impedance Characteristics and Chip-Parasitics Extraction of High-Performance VCSELs

Cited by 13 publications

References 17 publications

Equivalent Circuit Model of High-Performance VCSELs

Equivalent Circuit Model of High-Performance VCSELs

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

Regional Pulsewidth and Delay Nonuniformity of Modulated 940 nm Vertical‐Cavity Surface‐Emitting Laser Array

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