Equivalent Circuit Model of High-Performance VCSELs

Sanayeh, Marwan Bou; Hamad, Wissam; Hofmann, Werner

doi:10.3390/photonics7010013

Cited by 3 publications

(2 citation statements)

References 12 publications

(25 reference statements)

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“…This work is an extension of [4] and examples of recent similar works on this topic can be found in [5], [6], [7], [8]. This work together with [5] include the additional use of two sub-circuits to keep track of the free carriers in the barrier regions and in the QWs.…”

Section: Introductionmentioning

confidence: 97%

Large-Signal Equivalent Circuit for Datacom VCSELs

Grabowski

Gustavsson

et al. 2021

J. Lightwave Technol.

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Increasing the baud rate in optical interconnects (OIs) will require the use of more sophisticated driver and receiver electronics. This will help overcome the stagnated bandwidth of the Vertical-Cavity Surface-Emitting Laser (VCSEL) and the pin-photodetector. Next generation OIs operating at single lane rates of 50+ Gbaud will therefore require careful co-optimization of the electronics and the optoelectronics. To facilitate this work there is a need of an accurate equivalent circuit for the optoelectronic components, functioning over a broad drive current and ambient temperature range. The VCSEL is the most important and complex to model due to its nonlinear behavior and strongly varying characteristics with drive current and ambient temperature. For this purpose, a large-signal equivalent circuit dedicated for high-speed datacom VCSELs has been developed and is presented here. The distributed electrical parasitics in the device layout are carefully considered, the intrinsic speed limitation from carrier transport effects in the Separate-Confinement-Heterostructure (SCH) and the carrierphoton interaction in the Quantum Wells (QWs) are included, and self-heating effects in the device are monitored. The circuit is purposely based on physical instead of empirical models so that it can provide usable feedback to VCSEL designers. For circuit demonstration, it is implemented in Keysight's Advanced Design System (ADS) software and thereafter applied to replicate the performance of a state-of-the-art 28-GHz-bandwidth VCSEL at different temperatures and drive currents. Comparison is made between simulated and measured steady-state characteristics, small-signal behavior, and large-signal response under 28 Gbaud On-Off-Keying (OOK) and Pulse-Amplitude-Modulation 4 (PAM4) modulation, showing good agreement.

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Section: Introductionmentioning

confidence: 97%

Large-Signal Equivalent Circuit for Datacom VCSELs

Grabowski

Gustavsson

et al. 2021

J. Lightwave Technol.

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“…The vertical‐cavity surface‐emitting laser (VCSEL) array has rapidly emerged as a key visual device to meet the future demands on 3D distant sensing, morphological profiling, autonomous driving, augmented reality gaming, and intelligent networking applications. With the success of the single‐chip VCSELs which play an important role in short‐distance intradata center communication, [ 1 ] the mature fabrication technology benefits the VCSEL from advantages of lower power consumption and higher modulation speed at a lower cost, which has pushed forward the popular research fields of the VCSELs extended from the transmitter to sensors, light detection and ranging (LiDAR), scanners, etc. in recent years.…”

Section: Introductionmentioning

confidence: 99%

Regional Pulsewidth and Delay Nonuniformity of Modulated 940 nm Vertical‐Cavity Surface‐Emitting Laser Array

Cheng

et al. 2022

Advanced Photonics Research

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Under pulsed modulation, the emission uniformity in terms of pulsewidth and delay of a 940 nm multimode vertical‐cavity surface‐emitting laser (MM‐VCSEL) array is characterized by analyzing the position‐dependent pulsating and chirping dynamics among localized 600 VCSEL elements. In addition, the MM‐VCSEL array biased nearly threshold current (Ith) of 350 mA with a low resistance of 0.72 Ω reveals serious impedance mismatching with a high reflection coefficient (Γ) of −0.97. The MM‐VCSEL array biased below threshold (at Idc: ≈0.9 Ith) reveals low‐impedance and high‐capacitance behavior to result in large modulation reflection with allowable −3 dB bandwidth of 0.8 GHz. The nonuniform optical intensity and delay distribution among all MM‐VCSEL elements corroborate that the gradually enlarged inductance attenuates the modulation current away from bond wires. By modulating the 0.9Ith‐biased MM‐VCSEL array with an 127 ps‐wide electrical pulse with a peak amplitude of 15.3 V, a multimode fiber probe collects the single MM‐VCSEL output with average power, peak voltage, and pulsewidth of 0.08 mW, 25.1 mV, and 602 ps. The delay time as large as 273.4 ps between the nearest and farthest parts of local MM‐VCSEL elements in the array determines its impulse response and uniformity for applications.

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Special Issue “Semiconductor Laser Dynamics: Fundamentals and Applications”

Lenstra¹

2020

Photonics

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With the advent of integrated photonics, a crucial role is played by semiconductor diode lasers (SDLs) as coherent light sources. Old paradigms of semiconductor laser dynamics, like optical injection, external feedback and the coupling of lasers, regained relevance when SDLs were integrated on photonic chips. This Special Issue presents a collection of seven invited feature papers and 11 contributed papers reporting on recent advances in semiconductor laser dynamics.

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Equivalent Circuit Model of High-Performance VCSELs

Cited by 3 publications

References 12 publications

Large-Signal Equivalent Circuit for Datacom VCSELs

Large-Signal Equivalent Circuit for Datacom VCSELs

Regional Pulsewidth and Delay Nonuniformity of Modulated 940 nm Vertical‐Cavity Surface‐Emitting Laser Array

Special Issue “Semiconductor Laser Dynamics: Fundamentals and Applications”

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