2018
DOI: 10.1103/physrevb.97.245412
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Impact of valley phase and splitting on readout of silicon spin qubits

Abstract: We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase difference controls the relative strength of the intra-and inter-valley tunnel couplings, which, in the proposed Pauli-spin blockade readout scheme, couple singlets and polarized triplets, respectively. We find that high-fidelity readout is possible for a wide range of phase … Show more

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Cited by 19 publications
(16 citation statements)
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“…14 illustrates how the ancilla dot may be used to implement a valley-to-charge conversion, such that the spin state of the ground valley is unaffected after postselection. We neglect the valley phase here as analyzing its effect in readout is not the present focus, although it certainly will affect readout quality [111]. We make use of Eq.…”
Section: Valley Projective Measurementmentioning
confidence: 99%
“…14 illustrates how the ancilla dot may be used to implement a valley-to-charge conversion, such that the spin state of the ground valley is unaffected after postselection. We neglect the valley phase here as analyzing its effect in readout is not the present focus, although it certainly will affect readout quality [111]. We make use of Eq.…”
Section: Valley Projective Measurementmentioning
confidence: 99%
“…Bulk silicon has six-fold degenerate conduction band minima referred to as valleys. In a Si/SiO 2 hetero-structure, strong confinement along the vertical (áș‘) direction and strain at the Si/SiO 2 interface raises the energy of the four in-plane valleys, leaving a 2-fold degeneracy of the out-of-plane [27,28]. Disorder at the Si/SiO 2 interface can cause |∆| and φ to vary randomly between QDs [29,30].…”
Section: A Valley-orbit Hamiltonianmentioning
confidence: 99%
“…with the complex quantity ∆ j = E j V e iφ j consisting of the valley splitting E j V and valley phase φ j in dot j = L, C, R. Because of atomistic defects at the silicon interface the valley pseudo-vector can have a different phase in each dot [36,11,42,22]. The valley Hamiltonian in the valley eigenbasis of each dot can be written as…”
Section: Hamiltonianmentioning
confidence: 99%