Impact of silicon nitride CESL on NLDEMOS transistor reliability

Beylier, G.; Bruyère, S.; Benoit, D.; Ghibaudo, G.

doi:10.1016/j.microrel.2008.07.035

Cited by 2 publications

(2 citation statements)

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“…Such results would not have been exhibited by a simple C(V) measurement. Secondly, there is a surprising minority carrier response whereas high frequency signal is applied that we have attributed to a permanent inversion layer (5). Finally, steady state charge behaviour can not be characterized because of the opening of the hysteresis according to the sweep.…”

Section: C(v) Hysteresis Analysis Descriptionmentioning

confidence: 88%

“…However, it is now well known for influencing active device performances: its mechanical stress enables to improve MOS transistor performances (2), but its composition can also be at the origin of reliability issues like charging damage (3), data retention degradation for single polysilicon flash memory and high voltage MOS aging acceleration (4). In recent studies, it has been reported that a-Si x N y :H composition modifies the dynamic of charge loss in non volatile memory (3) and this wearout has been ascribed to mobile charge in the a-Si x N y :H (5). In this context, a new methodology will be presented in order to determine the trapped charge kinetics in such a film.…”

Section: Introductionmentioning

confidence: 99%

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New Characterization Methodology of Borderless Silicon Nitride Charge Kinetic using C(V) Hysteresis Loops

et al. 2007

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In this paper a new characterization methodology of borderless silicon nitride is presented. This material, deposited by Plasma Enhanced Chemical Vapor Deposition process, contains a large charge quantity attributed to K centres. Actually, a steady state has been searched, while taking into account charge considerations, electrical field and time influence during C(V) hysteresis. It is achieved by a capacitance versus time at constant voltage experiment, after a complete C(V) hysteresis used to set up an initial state of charge. The charge evolution occurring during stress time is related to the charge transformation kinetics. An empirical kinetic model has been extracted from these results, with time constant dependent on field and temperature. A faster positive to negative charge transformation has been shown, attributed to an easier holes trapping. Finally, this new characterization method demonstrates that data retention charge loss is correlated to trapping kinetics in borderless silicon nitride.

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Section: C(v) Hysteresis Analysis Descriptionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

New Characterization Methodology of Borderless Silicon Nitride Charge Kinetic using C(V) Hysteresis Loops

et al. 2007

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The Effect of the Inclination Angle on Inverse Z Joints in Composite Materials Bonded with Adhesives

Adin¹,

Turgut²

2013

Materials Testing

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MP 110422 unique mechanical behavior of suture joints. Stiffness, strength, and local stress distributions were predicted to assess variations in deformation and failure mechanisms. A unique homogeneous stress fields were observed throughout both the skeletal and interfacial components of the triangular geometry thus provided advantages in load transmission, weight, stiffness, strength, energy absorption, and fatigue over the rectangular geometry. Borgmeier and DeVries also studied the effect of the modification of the lap joint geometry by tapering the adherends. In these studies, unmodified and modified samples with tapered adherends were tested. They reported that tapering of the adherends reduced the rate at which shear stress increased as the bond termini were approached. This, in principle, results in a more uniform distribution of the shear stresses over the overlap region of the joint [14]. Afendi et al. [15] investigated the effect of scarf angle (θ = 45 0 , 60 0 and 75 0) on the strength of scarf joints of dissimilar adher

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Impact of silicon nitride CESL on NLDEMOS transistor reliability

Cited by 2 publications

References 2 publications

New Characterization Methodology of Borderless Silicon Nitride Charge Kinetic using C(V) Hysteresis Loops

New Characterization Methodology of Borderless Silicon Nitride Charge Kinetic using C(V) Hysteresis Loops

The Effect of the Inclination Angle on Inverse Z Joints in Composite Materials Bonded with Adhesives

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