Abstract:In this paper a new characterization methodology of borderless silicon nitride is presented. This material, deposited by Plasma Enhanced Chemical Vapor Deposition process, contains a large charge quantity attributed to K centres. Actually, a steady state has been searched, while taking into account charge considerations, electrical field and time influence during C(V) hysteresis. It is achieved by a capacitance versus time at constant voltage experiment, after a complete C(V) hysteresis used to set up … Show more
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