Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

“…A low concentration of hydrofluoric acid for the etching solution leads to obtain a homogenous porous layer [9]. For the preparation of the etched silicon surface (EtSi), the porous silicon substrate was etched in NaOH solution [10] to break up the porous silicon layer and produce a rugged surface [11].…”

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

“…However, the main problem encountered for III-V element-based solar cells mainly lies in the development of large surface photovoltaic structures due to their high cost, making the employment of low cost substrates highly desirable. Accordingly, the epitaxial growth of the GaAs layer on Si substrate has attracted considerable attention owing to their large area availability, low cost and high mechanical strength [ 9 , 10 , 11 , 12 , 13 , 14 ]. Promising InAs/GaAs QD-based optoelectronic devices, directly grown on Si substrate, have already been reported [ 15 , 16 , 17 , 18 , 19 , 20 ].…”