Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Chebil, W.; Fouzri, A.; Fargi, Abdelaali; Azeza, B.; Zaâboub, Z.; Sallet, Vincent

doi:10.1016/j.materresbull.2015.06.003

Cited by 47 publications

(12 citation statements)

References 45 publications

(32 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The CBD method was used because it is a simple experimental setup, low temperature and inexpensive technique. ZnO has been grown on different substrates such as Si [31], sapphire [32], GaN [33] and ITO (indium tin oxide) substrates [34]. The ITO substrate wast adopted for this study due to it is transparency in the visible region and low price compared to the Si and GaN substrates, respectively.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Ahmed

Mwankemwa

Carleschi

et al. 2018

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

In this study, pure and Sm doped ZnO nanorods from 0.0 to 5.5 at.% were synthesized using the chemical bath deposition method at 90 • C. The effect of Sm doping of ZnO nanorods on their structural, morphology and optical properties were investigated. X-ray diffraction patterns revealed that Sm had been successfully incorporated into the ZnO lattice and no other impurities or Sm oxide phases were detected. Field emission scanning electron microscopy images showed that the growth rate of the nanorods was suppressed by Sm doping. Room temperature Raman scattering spectroscopy revealed that the relative intensity of E 2 (high) mode decreased and shifted slightly towards a lower wavenumber in Sm doped ZnO when compared to the undoped ZnO nanorods. The photoluminescence spectrum of as-synthesized Sm-doped samples measured at room temperature shows that the UV emission is slightly red shifted and the green-yellow emission of the visible emission is enhanced, when compared to undoped samples. Photoluminescence studies also revealed the good crystal quality of the as-synthesized samples as all sample shows strong ultraviolet and weak deep-level emission peaks. The as-synthesized samples were also characterized using X-ray photoelectron spectroscopy that revealed the presence of Zn and O in all samples and a small amount of Sm in 5.5 at.% Sm doped ZnO was detected. Furthermore, the current-voltage characteristics of a fabricated Schottky diodes showed a good rectifying behavior when ZnO doped with Sm at 1.5 at.%. The obtained Schottky barrier height for pure and Sm doped ZnO nanorods were 0.55 eV and 0.72 eV, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Ahmed

Mwankemwa

Carleschi

et al. 2018

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

show abstract

“…Las películas de ZnO revelan dos picos dominantes, un pico de emisión en el ultravioleta (UV) centrado en 387 nm (3.20 eV) y un pico de mayor emisión en verde que se centra en 537 nm (2.30 eV) [26]. El pico de emisión en 387 nm, se debe a la recombinación de excitones libres en la región UV [27]. La película de ZnO-Cu presenta un pico en el rango de 525 a 550 nm que corresponde a la región de luminiscencia verde, debido a la presencia de defectos intrínsecos, como vacancias de zinc (Vz) [28], intersticios de zinc (Zni), vacancias de oxígeno (Vo) e intersticios de oxígeno (Oi) [29].…”

Section: Resultsunclassified

Emisión y defectos de nanoestructuras de películas delgadas de ZnO y ZnO-Cu obtenidas a baja temperatura

et al. 2021

View full text Add to dashboard Cite

RESUMEN Se reportan películas delgadas de ZnO y ZnO-Cu con espesores entre 220-630 nm aproximadamente y bien adheridas sobre sustratos de vidrio. La síntesis se llevó a cabo por el proceso sol gel a temperatura ambiente y depositadas mediante la técnica de centrifugado. Todas las películas de ZnO y ZnO-Cu obtenidas, presentan luminiscencia en el rango ubicado entre 520 - 550 nm con intensidades que están relacionadas al número de capas depositadas sobre el sustrato. Sin embargo, la incorporación del Cobre intensifica la emisión de fotoluminiscencia en el rango visible. La disminución en la emisión en UV del ZnO (380 nm) se atribuye a la recombinación no radiativa del proceso causado por los átomos de Cu. Por DRX, se comprobó que la incorporación de iones de Cu a la solución precursora no afectó de manera significativa la estructura cristalina de las películas (wurtzita). El análisis por espectroscopía Raman de las películas, reporta la emisión en el modo Bg y Bu' ubicado en 327 y 466 cm-1, que corresponde a CuO. Los anillos de SAED de las imágenes HRTEM de las películas de ZnO-Cu presentan difracción de CuO en el plano (020) y se corroboran los resultados mostrados en la espectroscopía Raman. Estos materiales así obtenidos, pueden tener aplicaciones en el desarrollo de dispositivos ópticos y energéticos para su uso en pantallas luminiscentes y contribuir a la generación de innovación en materiales con uso de tecnología verde.

show abstract

“…Grain size can be affected by different parameters such as precursor concentration [35], nature of solvent [36], thickness [37], temperature [38] etc. In our previous work [18] and using the same chemical product and synthesis process, crystalline size (~22nm) of ZnO layer deposited on glass, ZnO, Sapphire (001) and p-Si (001) and ( 111 But peak diffraction broadening can be caused by crystallite size and also by lattice strain. It is a description of the lattice parameters distribution arising from crystal deformations.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…These numerous elaboration techniques involve very hard growth conditions, as high pressure and temperature, and use unsafe chemicals. Furthermore, simple growth techniques and low cost, such as, sol gel [18], hydrothermal growth methods [19], electrodeposition [20], and chemical bath deposition [21] can be used for the synthesis of ZnO nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Characterization of sol gel Zn1-xCaxO thin layers deposited on p-Si substrate by spin-coating method

et al. 2020

View full text Add to dashboard Cite

Thin films Zn1-xCaxO (0≤x≤6%) on a p-Si substrate are elaborated by sol-gel process and spin coating. X-ray diffraction displays a hexagonal wurtzite structure with an increase of lattice parameters confirming the substitution of Zn 2+ by Ca 2+ . The estimation of crystallite sizes along the three main crystallographic planes is practically constant (22 nm) suggesting a spherical symmetry shape of the crystallites which is confirmed by SEM. UV-visible reflectance spectra attest a band gap tuning from 3.144 to 3.262 eV which is confirmed by the PL measurement at 2 K for Zn0.94Ca0.06O sample by the appearance of a broad band around 3.508 eV. Although the luminescence of the samples is weak, we well distinguish the free exciton emission (FXA ) positioned at 3.376 eV and the bound exciton recombination (D 0 X) around 3.362 eV.

show abstract

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Cited by 47 publications

References 45 publications

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Emisión y defectos de nanoestructuras de películas delgadas de ZnO y ZnO-Cu obtenidas a baja temperatura

Characterization of sol gel Zn1-xCaxO thin layers deposited on p-Si substrate by spin-coating method

Contact Info

Product

Resources

About